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PDF IRFS634B Data sheet ( Hoja de datos )
| Número de pieza | IRFS634B | |
| Descripción | 250V N-Channel MOSFET | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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November 2001
IRF634B/IRFS634B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters and
switch mode power supplies.
Features
• 8.1A, 250V, RDS(on) = 0.45Ω @VGS = 10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
G DS
TO-220
IRF Series
GD S
TO-220F
IRFS Series
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
IRF634B
IRFS634B
250
8.1 8.1 *
5.1 5.1 *
32.4 32.4 *
± 30
200
8.1
7.4
5.5
74 38
0.59 0.3
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
IRF634B
1.69
0.5
62.5
IRFS634B
3.29
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
1 page  
Typical Characteristics (Continued)
100 D = 0 .5
1 0 -1
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
sin g le p u lse
※ N otes :
1. Z θ JC(t) = 1.69 ℃ /W M ax.
2. D uty Factor, D =t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S qu a re W ave P u lse D u ra tion [se c]
101
Figure 11-1. Transient Thermal Response Curve for IRF634B
D = 0.5
100
0.2
0.1
1 0 -1
0.05
0.02
0.01
1 0 -2
1 0 -5
※ N otes :
1. Z θ JC(t) = 3.29 ℃ /W M ax.
2. D uty Factor, D =t /t
12
3 . T JM - T C = P DM * Z θ JC(t)
sin gle pu lse
PDM
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S qu a re W ave P u lse D u ra tion [se c]
101
Figure 11-2. Transient Thermal Response Curve for IRFS634B
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRFS634B.PDF ] | |
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