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PDF IRFS654B Data sheet ( Hoja de datos )

Número de pieza IRFS654B
Descripción 250V N-Channel MOSFET
Fabricantes Fairchild 
Logotipo Fairchild Logotipo



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No Preview Available ! IRFS654B Hoja de datos, Descripción, Manual

November 2001
IRF654B/IRFS654B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters and
switch mode power supplies.
Features
• 21A, 250V, RDS(on) = 0.14@VGS = 10 V
• Low gate charge ( typical 95 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
G DS
TO-220
IRF Series
GD S
TO-220F
IRFS Series
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
IRF654B
IRFS654B
250
21 21 *
13.3 13.3 *
84 84 *
± 30
700
21
15.6
5.5
156 50
1.25 0.4
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
IRF654B
0.8
0.5
62.5
IRFS654B
2.5
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001

1 page




IRFS654B pdf
Typical Characteristics (Continued)
100
D = 0.5
1 0 -1
0.2
0.1
0.05
0.02
0.01
1 0 -2
sin gle pu lse
N otes :
1. Z θ JC(t) = 0.8 /W M ax.
2. D uty Factor, D =t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S qu a re W ave P u lse D u ra tion [se c]
101
Figure 11-1. Transient Thermal Response Curve for IFR654B
D = 0.5
100
0.2
0.1
1 0 -1
0.05
0.02
0.01
1 0 -2
1 0 -5
N otes :
1. Z θ JC(t) = 2.51 /W M ax.
2. D uty Factor, D =t /t
12
3 . T JM - T C = P DM * Z θ JC(t)
sin gle pu lse
PDM
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S qu a re W ave P u lse D u ra tion [se c]
101
Figure 11-2. Transient Thermal Response Curve for IRFS654B
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001

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