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PDF IRFSL11N50A Data sheet ( Hoja de datos )
| Número de pieza | IRFSL11N50A | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | IRF | |
| Logotipo |  |
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PD- 91847A
IRFSL11N50A
l Dynamic dv/dt Rating
l Repetitive Avalanche Rated
l Fast Switching
l Ease of Paraleling
l Simple Drive Requirements
HEXFET® Power MOSFET
D
VDSS = 500V
RDS(on) = 0.55Ω
G
ID = 11A
S
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient
T O -262
Max.
11
7.0
44
190
1.3
± 30
390
11
19
4.1
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
–––
Max.
0.75
40
Units
°C
1
9/2/99
1 page  
IRFSL11N50A
12
10
8
6
4
2
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.00001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
t2
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFSL11N50A.PDF ] | |
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