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Número de pieza | IRFR9110 | |
Descripción | P Channel Power MOSFET | |
Fabricantes | Intersil | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRFR9110 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Data Sheet
IRFR9110, IRFU9110
July 1999 File Number 4001.3
3.1A, 100V, 1.200 Ohm, P-Channel Power
MOSFETs
These are advanced power MOSFETs designed, tested, and
guaranteed to withstand a specific level of energy in the
avalanche breakdown mode of operation. These are
P-Channel enhancement mode silicon gate power
field-effect transistors designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17541.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFR9110
TO-252AA
IF9110
IRFU9110
TO-251AA
IF9110
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in the tape and reel, i.e., IRFR91109A.
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
Features
• 3.1A, 100V
• rDS(ON) = 1.200Ω
• Temperature Compensating PSPICE™ Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
GATE
SOURCE
DRAIN (FLANGE)
4-77
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page IRFR9110, IRFU9110
Typical Performance Curves Unless Otherwise Specified (Continued)
400
CISS
300
VGS = 0V, f = 1MHz
CISS = CGS + CGD
200
COSS
CRSS = CGD
COSS ≈ CDS + CGD
100
CRSS
0
0 -5 -10 -15 -20 -25
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Test Circuits and Waveforms
-100
-75
-50
-25
VDD = BVDSS
VDD = BVDSS
RL = 32.2Ω
IG(REF) = -1.45mA
VGS = -10V
0.75 BVDSS 0.75 BVDSS
0.50 BVDSS 0.50 BVDSS
0.25 BVDSS 0.25 BVDSS
-10.0
-7.5
-5.0
-2.5
0
IG(REF)
20
IG(ACT)
t, TIME (µs)
IG(REF)
80
IG(ACT)
0.0
NOTE: Refer to Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
VDS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VGS
tP
RG
L
DUT
-
VDD
+
IAS
0.01Ω
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
tAV
0
VDD
IAS
tP
BVDSS
VDS
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
RL
VGS
DUT
RG
-
VDD
+
FIGURE 16. SWITCHING TIME TEST CIRCUIT
4-81
tON
td(ON)
tr
0
10%
tOFF
td(OFF)
tf
10%
VDS
VGS
0
90%
10%
50%
PULSE WIDTH
90%
50%
90%
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet IRFR9110.PDF ] |
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