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PDF K4T1G044QM Data sheet ( Hoja de datos )

Número de pieza K4T1G044QM
Descripción 1Gb M-die DDR2 SDRAM Specification
Fabricantes Samsung 
Logotipo Samsung Logotipo



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1Gb M-die DDR2 SDRAM
DDR2 SDRAM
1Gb M-die DDR2 SDRAM Specification
Version 1.1
January 2005
Page 1 of 29
Rev.1.1 Jan. 2005

1 page




K4T1G044QM pdf
1Gb M-die DDR2 SDRAM
DDR2 SDRAM
x8 package pinout (Top View) : 68ball FBGA Package(60balls + 8balls of dummy balls)
1
NC
2
NC
3
VDD
DQ6
VDDQ
DQ4
NU/
RDQS
VSSQ
DQ1
VSSQ
VSS
DM/
RDQS
VDDQ
DQ3
VDDL
VREF
CKE
VSS
WE
BA2
BA0
BA1
VSS
A10/AP
A3
A1
A5
A7 A9
VDD
A12
NC
NC
NC
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
W
7 89
NC
NC
VSSQ DQS VDDQ
DQS VSSQ
VDDQ DQ0
DQ2 VSSQ
DQ7
VDDQ
DQ5
VSSDL
RAS
CK
CK
VDD
ODT
CAS
CS
A2 A0 VDD
A6 A4
A11 A8 VSS
NC
A13
NC
NC
Notes:
1. Pins F3 and E2 have
identical capacitance as
pins F7 and E8.
2. For a read, when enabled,
strobe pair RDQS &
RDQS are identical in
function and timing to
strobe pair DQS & DQS
and input masking
function is disabled.
3. The function of DM or
RDQS/RDQS are enabled
by EMRS command.
4. VDDL and VSSDL are
power and ground for the
DLL.
Ball Locations (x8)
: Populated Ball
+ : Depopulated Ball
Top View (See the balls through the Package)
123456789
A + + +++
B + ++ + +++ ++
C + ++ + +++ ++
D + ++ + +++ ++
E + ++
F + ++
G + ++
H + ++
J + ++
K+
+ ++
L
+ ++
+
M+
+ ++
N
+ ++
+
P+
+ ++
R
+ ++
+
T + ++ + +++ ++
U + ++ + +++ ++
V + ++ + +++ ++
W + + +++
Page 5 of 29
Rev.1.1 Jan. 2005

5 Page





K4T1G044QM arduino
1Gb M-die DDR2 SDRAM
DDR2 SDRAM
3. Absolute Maximum DC Ratings
Symbol
VDD
VDDQ
VDDL
VIN, VOUT
TSTG
Parameter
Voltage on VDD pin relative to Vss
Voltage on VDDQ pin relative to Vss
Voltage on VDDL pin relative to Vss
Voltage on any pin relative to Vss
Storage Temperature
Rating
- 1.0 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
-55 to +100
Units
V
V
V
V
°C
Notes
1
1
1
1
1, 2
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please
refer to JESD51-2 standard.
4. AC & DC Operating Conditions
Recommended DC Operating Conditions (SSTL - 1.8)
Symbol
Parameter
VDD
VDDL
VDDQ
VREF
VTT
Supply Voltage
Supply Voltage for DLL
Supply Voltage for Output
Input Reference Voltage
Termination Voltage
Min.
1.7
1.7
1.7
0.49*VDDQ
VREF-0.04
Rating
Typ.
1.8
1.8
1.8
0.50*VDDQ
VREF
Max.
1.9
1.9
1.9
0.51*VDDQ
VREF+0.04
Units
V
V
V
mV
V
Notes
4
4
1,2
3
There is no specific device VDD supply voltage requirement for SSTL-1.8 compliance. However under all conditions VDDQ must
be less than or equal to VDD.
1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is
expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ.
2. Peak to peak AC noise on VREF may not exceed +/-2% VREF(DC).
3. VTT of transmitting device must track VREF of receiving device.
4. AC parameters are measured with VDD, VDDQ and VDDL tied together.
Page 11 of 29
Rev.1.1 Jan. 2005

11 Page







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