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PDF K4T51083QC Data sheet ( Hoja de datos )

Número de pieza K4T51083QC
Descripción 512Mb C-die DDR2 SDRAM
Fabricantes Samsung 
Logotipo Samsung Logotipo



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No Preview Available ! K4T51083QC Hoja de datos, Descripción, Manual

512Mb C-die DDR2 SDRAM
DDR2 SDRAM
512Mb C-die DDR2 SDRAM Specification
Version 1.2
May 2005
Page 1 of 29
Rev. 1.2 May 2005

1 page




K4T51083QC pdf
512Mb C-die DDR2 SDRAM
DDR2 SDRAM
x8 package pinout (Top View) : 60ball FBGA Package
1 23
7 89
VDD
DQ6
VDDQ
DQ4
VDDL
NU/
RDQS
VSSQ
DQ1
VSSQ
VSS
DM/
RDQS
VDDQ
DQ3
VREF
VSS
CKE
NC BA0
A10/AP
WE
BA1
A1
VSS
A3
A5
A7 A9
VDD
A12
NC
A
B
C
D
E
F
G
H
J
K
L
VSSQ DQS
DQS VSSQ
VDDQ
DQ2
DQ0
VSSQ
VSSDL
CK
RAS
CK
CAS
A2
CS
A0
A6 A4
A11 A8
NC A13
VDDQ
DQ7
VDDQ
DQ5
VDD
ODT
VDD
VSS
Notes :
1. Pins B3 and A2 have identical capacitance as pins B7 and A8.
2. For a read, when enabled, strobe pair RDQS & RDQS are
identical in function and timing to strobe pair DQS & DQS and
input masking function is disabled.
3. The function of DM or RDQS/RDQS are enabled by EMRS
command.
4. VDDL and VSSDL are power and ground for the DLL.
Ball Locations (x8)
: Populated Ball
+ : Depopulated Ball
Top View (See the balls through the Package)
123456789
A + ++
B + ++
C + ++
D + ++
E + ++
F+
G
+ ++
+ ++
+
H+
J
+ ++
+ ++
+
K+
+ ++
L
+ ++
+
Page 5 of 29
Rev. 1.2 May 2005

5 Page





K4T51083QC arduino
512Mb C-die DDR2 SDRAM
DDR2 SDRAM
3. Absolute Maximum DC Ratings
Symbol
VDD
VDDQ
VDDL
VIN, VOUT
TSTG
Parameter
Voltage on VDD pin relative to Vss
Voltage on VDDQ pin relative to Vss
Voltage on VDDL pin relative to Vss
Voltage on any pin relative to Vss
Storage Temperature
Rating
- 1.0 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
-55 to +100
Units
V
V
V
V
×C
Notes
1
1
1
1
1, 2
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please
refer to JESD51-2 standard.
4. AC & DC Operating Conditions
Recommended DC Operating Conditions (SSTL - 1.8)
Symbol
VDD
VDDL
VDDQ
VREF
VTT
Parameter
Supply Voltage
Supply Voltage for DLL
Supply Voltage for Output
Input Reference Voltage
Termination Voltage
Min.
1.7
1.7
1.7
0.49*VDDQ
VREF-0.04
Rating
Typ.
1.8
1.8
1.8
0.50*VDDQ
VREF
Max.
1.9
1.9
1.9
0.51*VDDQ
VREF+0.04
Units
V
V
V
mV
V
Notes
4
4
1,2
3
There is no specific device VDD supply voltage requirement for SSTL-1.8 compliance. However under all conditions VDDQ must
be less than or equal to VDD.
1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is
expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ.
2. Peak to peak AC noise on VREF may not exceed +/-2% VREF(DC).
3. VTT of transmitting device must track VREF of receiving device.
4. AC parameters are measured with VDD, VDDQ and VDDDL tied together.
Page 11 of 29
Rev. 1.2 May 2005

11 Page







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