DataSheet.es    

PDF DS42515 Datasheet ( Hoja de datos )

Número de pieza DS42515
Descripción MCP Flash Memory and SRAM
Fabricantes AMD 
Logotipo AMD Logotipo

Total 30 Páginas
		
DS42515 Hoja de datos, Descripción, Manual
DS42515
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
Am29DL164D Bottom Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only,
Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM
DISTINCTIVE CHARACTERISTICS
MCP Features
s Power supply voltage of 2.7 to 3.3 volt
s High performance
— 85 ns maximum access time
s Package
— 69-Ball FBGA
s Operating Temperature
— –25°C to +85°C
Flash Memory Features
ARCHITECTURAL ADVANTAGES
s Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in other bank
— Zero latency between read and write operations
s Secured Silicon (SecSi) Sector: Extra 64 KByte sector
Factory locked and identifiable: 16 bytes available for
secure, random factory Electronic Serial Number; verifiable
as factory locked through autoselect function.
Customer lockable: Can be read, programmed, or erased
just like other sectors. Once locked, data cannot be changed
s Zero Power Operation
— Sophisticated power management circuits reduce power
consumed during inactive periods to nearly zero
s Bottom boot block
s Manufactured on 0.23 µm process technology
s Compatible with JEDEC standards
Pinout and software compatible with single-power-supply
flash standard
PERFORMANCE CHARACTERISTICS
s High performance
85 ns access time
Program time: 7 µs/word typical utilizing Accelerate function
s Ultra low power consumption (typical values)
2 mA active read current at 1 MHz
10 mA active read current at 5 MHz
200 nA in standby or automatic sleep mode
s Minimum 1 million write cycles guaranteed per sector
s 20 Year data retention at 125°C
Reliable operation for the life of the system
SOFTWARE FEATURES
s Data Management Software (DMS)
AMD-supplied software manages data programming and
erasing, enabling EEPROM emulation
Eases sector erase limitations
s Supports Common Flash Memory Interface (CFI)
s Erase Suspend/Erase Resume
Suspends erase operations to allow programming in same
bank
s Data# Polling and Toggle Bits
Provides a software method of detecting the status of
program or erase cycles
s Unlock Bypass Program command
Reduces overall programming time when issuing multiple
program command sequences
HARDWARE FEATURES
s Any combination of sectors can be erased
s Ready/Busy# output (RY/BY#)
Hardware method for detecting program or erase cycle
completion
s Hardware reset pin (RESET#)
Hardware method of resetting the internal state machine to
reading array data
s WP#/ACC input pin
Write protect (WP#) function allows protection of two outermost
boot sectors, regardless of sector protect status
Acceleration (ACC) function accelerates program timing
s Sector protection
Hardware method of locking a sector, either in-system or
using programming equipment, to prevent any program or
erase operation within that sector
Temporary Sector Unprotect allows changing data in
protected sectors in-system
SRAM Features
s Power dissipation
Operating: 50 mA maximum
Standby: 7 µA maximum
s CE1#s and CE2s Chip Select
s Power down features using CE1#s and CE2s
s Data retention supply voltage: 1.5 to 3.3 volt
s Byte data control: LB#s (DQ0–DQ7), UB#s (DQ8–DQ15)
This document contains information on a product under development at Advanced Micro Devices. The information
Publication# 23784 Rev: B Amendment/1
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
Issue Date: March 15, 2001
product without notice.
Refer to AMD’s Website (www.amd.com) for the latest information.

1 page

DS42515 pdf
PRODUCT SELECTOR GUIDE
Part Number
Standard Voltage Range: VCC = 2.73.3 V
Max Access Time (ns)
CE# Access (ns)
OE# Access (ns)
MCP BLOCK DIAGRAM
A0 to A19
A1
WP#/ACC
RESET#
CE#f
CIOf
A0 to A19
Flash Memory
85
85
35
DS42515
VCCf VSS
RY/BY#
16 Mbit
Flash Memory
DQ0 to DQ15/A1
SRAM
85
85
45
SA
LB#s
UB#s
WE#
OE#
CE1#s
CE2s
CIOs
VCCs/VCCQ VSS/VSSQ
AA00ttooAA1197
4 Mbit
Static RAM
DQ0 to DQ15/A1
DQ0 to DQ15/A1
DS42515
5

5 Page

DS42515 arduino
Table 3. Device Bus OperationsFlash Byte Mode, CIOf = VIL; SRAM Byte Mode, CIOs = VSS
Operation
(Notes 1, 2)
CE#f
CE1#s
CE2s
DQ15/
A1
OE# WE#
SA
LB#s
(Note 3)
UB#s
(Note 3)
RESET#
WP#/ACC
(Note 4)
DQ0DQ7
DQ8DQ15
HX
Read from Flash L
A1 L H X
X
X
H
L/H
DOUT
High-Z
XL
HX
Write to Flash
L
A1 H L X
X
X
H (Note 3) DIN
High-Z
XL
Standby
VCC ±
0.3 V
H
X
X
L
XX X
X
X
VCC ±
0.3 V
H
High-Z High-Z
X HH X
L
X
HLH
H HX X
X
L
Output Disable
H L/H High-Z High-Z
HX
L
A1 H H X
X
X
XL
Flash Hardware
Reset
X
H
X
X
L
X XX X
X
X
L
L/H High-Z High-Z
Sector Protect
(Note 5)
L
H
X
X
L
HL X
X
X VID L/H
DIN
X
Sector Unprotect
(Note 5)
L
H
X
X
L
HL X
X
X
VID (Note 6)
DIN
X
Temporary
Sector Unprotect
X
H
X
x
L
XX X
X
X
VID (Note 6)
DIN
High-Z
Read from
SRAM
H L H X L H SA X X H
X
DOUT
High-Z
Write to SRAM H L H X X L SA X X H X DIN High-Z
Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 8.512.5 V, VHH = 9.0 ± 0.5 V, X = Dont Care, SA = Sector Address,
AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Other operations except for those indicated in this column are inhibited.
2. Do not apply CE#f = VIL, CE1#s = VIL and CE2s = VIH at the same time.
3. Dont care or open LB#s or UB#s.
4. If WP#/ACC = VIL , the boot sectors will be protected. If WP#/ACC = VIH the boot sectors protection will be removed.
If WP#/ACC = VACC (9V), the program time will be reduced by 40%.
5. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the Sector/Sector
Block Protection and Unprotectionsection.
6. If WP#/ACC = VIL, the two outermost boot sectors remain protected. If WP#/ACC = VIH, the two outermost boot sector protection
depends on whether they were last protected or unprotected using the method described in Sector/Sector Block Protection and
Unprotection. If WP#/ACC = VHH, all sectors will be unprotected.
DS42515
11

11 Page


PáginasTotal 30 Páginas
PDF Descargar[ DS42515.PDF ]

Enlace url


Hoja de datos destacado

Número de piezaDescripciónFabricantes
DS42514MCP Flash Memory and SRAMAMD
AMD
DS42515MCP Flash Memory and SRAMAMD
AMD
DS42516MCP Flash Memory and SRAMAMD
AMD

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


www.DataSheet.es    |   2018   |  Privacy Policy  |  Contacto  |  Buscar