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PDF IRG4PC50KD Data sheet ( Hoja de datos )
| Número de pieza | IRG4PC50KD | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | IRF | |
| Logotipo |  |
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PD -91582B
IRG4PC50KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Short Circuit Rated
UltraFast IGBT
Features
q Short Circuit Rated UltraFast: Optimized for high
operating frequencies >5.0 kHz, and Short Circuit Rated
to 10µs @125°C, VGE = 15V
q Generation 4 IGBT design provides tighter parameter
distribution and higher efficiency than Generation 3
q IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft recovery anti-parallel diodes for use in
bridge configurations
q Industry standard TO-247AC package
Benefits
q Generation 4 IGBTs offer highest efficiencies available
q HEXFRED diodes optimized for performance with IGBTs.
Minimized recovery characteristics require less/no snubbing
q Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.84V
@VGE = 15V, IC = 30A
TO-247AC
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
52
30
104
104
25
280
10
± 20
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
Thermal Resistance
RqJC
RqJC
RqCS
RqJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
—
—
—
—
—
Typ.
—
—
0.24
—
6 (0.21)
Max.
0.64
0.83
—
40
—
Units
°C/W
g (oz)
1
12/3/98
1 page  
IRG4PC50KD
5000
4000
3000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
2000
1000
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCC = 400V
I C = 30A
16
12
8
4
0
0 40 80 120 160
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
200
4.5
VCC = 480V
VGE = 15V
TJ = 25 ° C
4.0 IC = 30A
3.5
3.0
2.5
2.0
0
10 20 30 40
RG, GateGResistance (W)(O )
Fig. 9 - Typical Switching Losses vs.
Gate Resistance
www.irf.com
50
100
RG =5O.0hWm
VGE = 15V
VCC = 480V
10
1
IC = 60 A
IC = 30 A
IC = 15 A
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRG4PC50KD.PDF ] | |
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