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PDF 2SB549 Data sheet ( Hoja de datos )
| Número de pieza | 2SB549 | |
| Descripción | (2SB548) PNP/NPN Silicon Epitaxial Transistor | |
| Fabricantes | NEC | |
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DATA SHEET
SILICON POWER TRANSISTOR
2SB548, 549/2SD414, 415
PNP/NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
FEATURES
• Ideal for audio amplifier drivers with 30 W to 50 W output
• High voltage
• Available for small mount spaces due to small and thin package
• Easy to be attached to radiators
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current
Total power dissipation
Total power dissipation
Symbol
2SB548/ 2SB549/
2SD414 2SD415
VCBO
−100/120
VCEO
−80/80 −100/100
VEBO
−5.0/5.0
IC(DC)
−0.8/0.8
IC(pulse)*
−1.5/1.5
PT (Ta = 25°C)
1.0
PT (Tc = 25°C)
10
Junction temperature
Storage temperature
Tj 150
Tstg −55 to +150
* PW ≤ 10 ms, duty cycle ≤ 50%
Unit
V
V
V
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Collector capacitance
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
VCB = −80/80 V, IE = 0
VEB = −3.0/3.0 V, IC = 0
VCE = −5.0/5.0 V, IC = −2.0/2.0 mA*
VCE = −5.0/5.0 V, IC = −200/200 mA*
IC = −500/500 mA, IB = −50/50 mA*
IC = −500/500 mA, IB = −50/50 mA*
VCE = −5.0/5.0 V, IC = −100/100 mA
VCB = −10/10 V, IE = 0, f = 1.0 MHz
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE2 CLASSIFICATION
Marking
hFE2
S
40 to 80
R
60 to 120
Q
100 to 200
P
160 to 320
MIN.
20
40
TYP.
MAX.
−1.0/1.0
−1.0/1.0
90
−0.4/0.3
−0.9/0.9
70/45
25/15
320
−2.0/2.0
−1.5/1.5
Unit
µA
µA
V
V
MHz
pF
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16141EJ2V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SB549.PDF ] | |
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