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Número de pieza | IRG4BC30S-S | |
Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! PD - 94069
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30S-S
Standard Speed IGBT
Features
• Standard: optimized for minimum saturation
voltage and low operating frequencies (< 1kHz)
• Generation 4 IGBT design provides tight
parameter distribution and high efficiency
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.4V
@VGE = 15V, IC = 18A
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
D2Pak
Max.
600
34
18
68
68
±20
10
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case )
Units
V
A
V
mJ
W
°C
Typ.
–––
0.50
–––
1.44
Max.
1.2
–––
40
–––
Units
°C/W
g (oz)
1
12/28/00
1 page 2000
1500
1000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
500
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4BC30S-S
20
VCC = 400V
I C = 18A
16
12
8
4
0
0 10 20 30 40 50 60
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
3.80
VCC = 480V
VGE = 15V
TJ = 25 ° C
3.76 IC = 18A
3.72
3.68
3.64
3.60
0
10 20 30 40
RG , Gate Resistance (OΩhm)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
100 RG = 23OΩhm
VGE = 15V
VCC = 480V
10
1
IC = 36 A
IC = 18 A
IC = 9.90AA
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IRG4BC30S-S.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRG4BC30S-S | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
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