|
|
Número de pieza | IRG4BC30U-S | |
Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRG4BC30U-S (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! PD - 91803
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30U-S
UltraFast Speed IGBT
Features
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard D2Pak package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.95V
@VGE = 15V, IC = 12A
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
D 2Pak
Max.
600
23
12
92
92
± 20
10
100
42
-55 to + 150
Thermal Resistance
RqJC
RqJA
Parameter
Junction-to-Case
Junction-to-Ambient, ( PCB Mounted,steady-state)*
Typ.
–––
–––
Max.
1.2
40
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
www.irf.com
Units
V
A
V
mJ
W
Units
°C/W
1
1 page IRG4BC30U-S
2000
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SH OR TE D
C res = C gc
1600
C oes = C ce + C gc
C ie s
1200
800 Coes
400 Cres
0A
1 10 100
VCE, Collector-to-Em itter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCE = 400V
IC = 12A
16
12
8
4
0
0 10 20 30 40
Qg , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
A
50
0.5
VCC = 480V
VGE = 15V
T J = 25°C
IC = 12A
0.4
0.3
10
RG = 23 Ω
V GE = 15V
V CC = 480V
1
IC = 24A
I C = 12A
I C = 6.0A
0.2
0
A
10 20 30 40 50 60
R G , Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
0.1 A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Ju n ctio n Te m pe ra tu re (°C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRG4BC30U-S.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRG4BC30U-S | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |