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Número de pieza | DS1609 | |
Descripción | Dual Port RAM | |
Fabricantes | Dallas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DS1609 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! DS1609
DS1609
Dual Port RAM
FEATURES
• Totally asynchronous 256–byte dual port memory
• Multiplexed address and data bus keeps pin count
low
• Dual port memory cell allows random access with
minimum arbitration
• Each port has standard independent RAM control sig-
nals
• Fast access time
• Low power CMOS design
• 24–pin DIP or 24–pin SOIC surface mount package
• Both CMOS and TTL compatible
• Operating temperature of –40°C to +85°C
• Standby current of 100 nA @ 25°C makes the device
ideal for battery backup or battery operate applica-
tions.
DESCRIPTION
The DS1609 is a random access 256–byte dual port
memory designed to connect two asyncronous ad-
dress/data buses together with a common memory ele-
ment. Both ports have unrestricted access to all
256 bytes of memory, and with modest system disci-
pline no arbitration is required. Each port is controlled
PIN ASSIGNMENT
PORT A
AD7A
AD6A
AD5A
AD4A
AD3A
AD2A
AD1A
AD0A
WEA
CEA
OEA
GND
1
2
3
4
5
6
7
8
9
10
11
12
PORT B
24 VCC
23 OEB
22 CEB
21 WEB
20 AD0B
19 AD1B
18 AD2B
17 AD3B
16 AD4B
15 AD5B
14 AD6B
13 AD7B
DS1609
24–PIN DIP (600 MIL)
See Mech. Drawings
Section
PORT A
AD7A
AD6A
AD5A
AD4A
AD3A
AD2A
AD1A
AD0A
WEA
CEA
OEA
GND
1
2
3
4
5
6
7
8
9
10
11
12
PORT B
24 VCC
23 OEB
22 CEB
21 WEB
20 AD0B
19 AD1B
18 AD2B
17 AD3B
16 AD4B
15 AD5B
14 AD6B
13 AD7B
DS1609S
24–PIN SOIC (300 MIL)
See Mech. Drawings
Section
PIN DESCRIPTION
AD0–AD7
– Port address/data
CE – Port enable
WE – Write enable
OE – Output enable
VCC
GND
– +5 volt supply
– Ground
by three control signals: output enable, write enable,
and port enable. The device is packaged in plastic
24–pin DIP and 24–pin SOIC. Output enable access
time of 50 ns is available when operating at 5 volts.
020499 1/7
1 page AC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
Address Setup Time
Address Hold Time
Output Enable Access
OE to High Z
CE to High Z
Data Setup Time
Data Hold Time
Write Pulse Width
CE Recovery Time
WE Recovery Time
OE Recovery Time
CE to OE Setup Time
CE to WE Setup Time
tAS
tAH
tOEA
tOEZ
tCEZ
tDS
tDH
tWP
tCER
tWER
tOER
tCOE
tCWE
AC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
Address Setup Time
Address Hold Time
Output Enable Access
OE to High Z
CE to High Z
Data Setup Time
Data Hold Time
Write Pulse Width
CE Recovery Time
WE Recovery Time
OE Recovery Time
CE to OE Setup Time
CE to WE Setup Time
tAS
tAH
tOEA
tOEZ
tCEZ
tDS
tDH
tWP
tCER
tWER
tOER
tCOE
tCWE
MIN
5
25
0
0
0
0
10
50
20
20
20
25
25
MIN
5
25
0
0
0
0
10
100
20
20
20
25
25
DS1609
(–40°C to +85°C; VCC = 5V ± 10%)
TYP
MAX
UNITS NOTES
ns
ns
50 ns 10
20 ns
20 ns
ns
ns
ns 11
ns 12
ns 12
ns 12
ns
ns
(–40°C to +85°C; VCC = 2.5V – 4.5V)
TYP
MAX
UNITS NOTES
ns
ns
100 ns 10
20 ns
20 ns
ns
ns
ns 11
ns 12
ns 12
ns 12
ns
ns
020499 5/7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet DS1609.PDF ] |
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