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PDF IRG4PC40FD Data sheet ( Hoja de datos )
| Número de pieza | IRG4PC40FD | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | IRF | |
| Logotipo |  |
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PD 91464B
IRG4PC40FD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-247AC package
Benefits
• Generation -4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
G
E
n-channel
Fast CoPack IGBT
VCES = 600V
VCE(on) typ. = 1.50V
@VGE = 15V, IC = 27A
TO-247AC
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
49
27
200
200
15
200
± 20
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
-----
------
Typ.
------
------
0.24
-----
6 (0.21)
Max.
0.77
1.7
------
40
------
Units
°C/W
g (oz)
www.irf.com
1
12/30/00
1 page  
4000
3000
2000
VGE = 0V
f = 1 MHz
Cies = Cge + Cgc + Cce
Cres = Cce
Coes = Cce + Cgc
SHORTED
C ies
1000 Coes
Cres
0A
1 10 100
VC E , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4PC40FD
20
VCE = 400V
IC = 27A
16
12
8
4
0A
0 20 40 60 80 100 120
Qg , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
3.3
VCC = 480V
VGE = 15V
TJ = 25°C
IC = 27A
3.2
3.1
100
RG = 10 Ω
VGE = 15V
VCC = 480V
10
1
I C = 54A
I C = 27A
IC = 14A
3.0
0
10 20
A
30 40 50 60
R G, Gate Resistance ( Ω )
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
0.1 A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRG4PC40FD.PDF ] | |
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