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PDF IRG4PC40KD Data sheet ( Hoja de datos )
| Número de pieza | IRG4PC40KD | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | IRF | |
| Logotipo |  |
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PD -91584A
IRG4PC40KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-247AC package
G
E
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiencies
available
• HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for
equivalent industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
Short Circuit Rated
UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.1V
@VGE = 15V, IC = 25A
TO-247AC
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
42
25
84
84
15
84
10
± 20
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.77
Units
1.7 °C/W
–––
40
––– g (oz)
1
4/15/2000
1 page  
3000
2500
2000
1500
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
1000
500
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4PC40KD
20
VCC = 400V
I C = 25A
16
12
8
4
0
0 20 40 60 80 100 120 140
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
3.00 VCC = 480V
VGE = 15V
TJ = 25 ° C
IC = 25A
2.50
2.00
100 RG =1O0hΩm
VGE = 15V
VCC = 480V
10
1
IC = 50 A
IC = 25 A
IC =12.5 A
1.50
0
10 20 30 40
RGRG, GGaattee Resistaannccee((OΩh)m)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRG4PC40KD.PDF ] | |
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