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PDF STP120NF10 Data sheet ( Hoja de datos )
| Número de pieza | STP120NF10 | |
| Descripción | N-CHANNEL 100V - 0.009 W - 120A DPAK/TO-220 STripFET II POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STB120NF10
STP120NF10
N-CHANNEL 100V - 0.009 Ω - 120A D²PAK/TO-220
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB120NF10
STP120NF10
100 V
100 V
< 0.0105 Ω 120 A
< 0.0105 Ω 120 A
s TYPICAL RDS(on) = 0.009 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize the on-resistance. It is therefore suitable as
primary switch in advanced high-efficiency, high-
frequency isolated DC-DC converters for Telecom and
Computer applications. It is also intended for any
applications with low gate drive requirements.
APPLICATIONS
s AUDIO AMPLIFIERS
s POWER TOOLS
3
1
D2PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB120NF10
STP120NF10
MARKING
B120NF10
P120NF10
PACKAGE
TO-263
TO-220
PACKAGING
TAPE & REEL
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS(2)
Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
May 2003
Value
100
100
± 20
120
85
480
312
2.08
10
550
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD ≤120A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 60A, VDD = 50V
1/10
1 page  
STB120NF10 STP120NF10
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature
..
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet STP120NF10.PDF ] | |
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