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Número de pieza | IRL5602S | |
Descripción | HEXFET Power MOSFET | |
Fabricantes | IRF | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRL5602S (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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IRL5602S
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l P-Channel
l Fast Switching
l Fully Avalanche Rated
HEXFET® Power MOSFET
D
VDSS = -20V
RDS(on) = 0.042W
G
S ID = -24A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The D2Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
D2Pak
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
-24
-17
-96
75
0.5
± 8.0
290
-12
7.5
-0.81
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
RqJC
RqJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
–––
–––
Max.
2.0
40
Units
°C/W
1
5/11/99
1 page 25
20
15
10
5
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRL5602S
VDS
VGS
RG
RD
D.U.T.
-4.5V
Pulse Width £ 1 µs
Duty Factor £ 0.1 %
-
+ VDD
VGS
10%
td(on) tr
90%
VDS
td(off) tf
1 D = 0.50
0.20
0.10
0.05
0.1 0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
0.0001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRL5602S.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRL5602S | HEXFET Power MOSFET | IRF |
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