|
|
PDF TBS6416B4E Data sheet ( Hoja de datos )
| Número de pieza | TBS6416B4E | |
| Descripción | 1M x 16 Bit x 4 Bank Synchronous DRAM | |
| Fabricantes | M-tec | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de TBS6416B4E (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
M.tec
1M x 16Bit x 4 Banks synchronous DRAM
TBS6416B4E
GENERAL DESCRIPTION
The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,
fabricated with M’tec high performance CMOS technology. Synchronous design allows precise cycle control with the use of
system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and
programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system
applications.
FEATURES
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four-banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)
ORDERING INFORMATION
Part No.
TBS6416B4E-7G
Max Freq.
143MHz
Interface
LVTTL
Package
54
TSOP(II)
Revision_1.1 1 Sep. 2000
1 page  
M.tec
TBS6416B4E
ABSOLUTE MAXIMUM RATING
Parameter
Voltage on any pin relative to VSS
Symbol
VIN, VOUT
Value
-1.0 ~ 4.6
Unit
V
Voltage on VCC supply relative to VSS
VCC, VCCQ
-1.0 ~ 4.6
V
Storage temperature
TSTG
-55 ~ +150
℃
Power dissipation
PD 1
W
Short circuit current
IOS 50
mA
Note:
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to the recommended operating conditions.
Exposure to higher voltage than recommended for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)
Parameter
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current (Input)
Input leakage current (I/O pins)
Symbol
VCC, VCCQ
VIH
VIL
VOH
VOL
IIL
IIL
Min
3.0
2.0
-0.3
2.4
-
-1
-1.5
Typ Max Unit Note
3.3 3.6 V
3.0 VCCQ+0.3 V
1
0 0.8 V
2
- - V IOH=-2mA
- 0.4 V IOL=2mA
-
1 uA
3
-
1.5 uA
3,4
Notes:
1. VIH (max) = 5.6V AC. The overshoot voltage duration is ≦ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≦ 3ns.
3. Any input 0V ≦ VIN ≦ VCCQ,
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
4. Dout is disabled, 0V ≦ Vout ≦ VCCQ
Revision_1.1 5 Sep. 2000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet TBS6416B4E.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TBS6416B4E | 1M x 16 Bit x 4 Bank Synchronous DRAM | M-tec |
| TBS6416B4E | 1M x 16-Bit x 4-Banks SDRAM | M-tec |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |