DataSheet.es    


PDF UPD4516161D Data sheet ( Hoja de datos )

Número de pieza UPD4516161D
Descripción 16M Bit Synchronous DRAM
Fabricantes Elpida 
Logotipo Elpida Logotipo



Hay una vista previa y un enlace de descarga de UPD4516161D (archivo pdf) en la parte inferior de esta página.


Total 30 Páginas

No Preview Available ! UPD4516161D Hoja de datos, Descripción, Manual

DATA SHEET
MOS INTEGRATED CIRCUIT
µPD4516161D
16M-bit Synchronous DRAM
2-banks, LVTTL
Description
The µPD4516161D is high-speed 16,777,216-bit synchronous dynamic random-access memory, organized as
524,288 words × 16 bits × 2 banks respectively.
The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.
All inputs and outputs are synchronized with the positive edge of the clock.
The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL).
This product is packaged in 50-pin TSOP (II).
Features
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Dual internal banks controlled by A11
Byte control by LDQM and UDQM
Programmable Wrap sequence: Sequential / Interleave
Programmable burst length: 1, 2, 4, 8 and full page
/CAS latency: 3
CBR (Auto) refresh and self refresh
• ×16 organization
Single 3.3 V ± 0.3 V power supply
LVTTL compatible
2,048 refresh cycles / 32 ms
Burst termination by Burst stop command and Precharge command
Ordering Information
Part number
µPD4516161DG5-A70-9NF
µPD4516161DG5-A75-9NF
µPD4516161DG5-A80-9NF
µPD4516161DG5-A10-9NF
Organization
(word × bit × bank)
512K × 16 × 2
Clock frequency
MHz (MAX.)
143
133
125
100
Package
50-pin PLASTIC TSOP (II)
(10.16mm(400))
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
Document No. E0143N10 (Ver.1.0)
(Previous No. M14888EJ2V0DS00)
Date Published May 2001 CP (K)
Printed in Japan
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

1 page




UPD4516161D pdf
CONTENTS
µPD4516161D
1. Input / Output Pin Function............................................................................................................... 7
2. Commands.......................................................................................................................................... 8
3. Simplified State Diagram ................................................................................................................ 11
4. Truth Table ....................................................................................................................................... 12
4.1 Command Truth Table ............................................................................................................................. 12
4.2 DQM Truth Table ...................................................................................................................................... 12
4.3 CKE Truth Table ....................................................................................................................................... 12
4.4 Operative Command Table ..................................................................................................................... 13
4.5 Command Truth Table for CKE .............................................................................................................. 16
4.6 Command Truth Table for Two Banks Operation.................................................................................. 17
5. Initialization ..................................................................................................................................... 18
6. Programming the Mode Register .................................................................................................. 19
7. Mode Register ................................................................................................................................. 20
7.1 Burst Length and Sequence ................................................................................................................... 21
8. Address Bits of Bank-Select and Precharge ................................................................................ 22
9. Precharge ......................................................................................................................................... 23
10. Read / Write Command Interval .................................................................................................... 24
10.1 Read to Read Command Interval ........................................................................................................ 24
10.2 Write to Write Command Interval ........................................................................................................ 24
10.3 Write to Read Command Interval ........................................................................................................ 25
10.4 Read to Write Command Interval ........................................................................................................ 26
11. Burst Termination ........................................................................................................................... 27
11.1 Burst Stop Command ........................................................................................................................... 27
11.2 Precharge Termination ........................................................................................................................ 28
11.2.1 Precharge Termination in READ Cycle .................................................................................... 28
11.2.2 Precharge Termination in WRITE Cycle .................................................................................. 28
Data Sheet E0143N10
5

5 Page





UPD4516161D arduino
3. Simplified State Diagram
Mode
Register
Set
MRS
µPD4516161D
IDLE
SELF
SELF exit
REF
Self
Refresh
CBR (Auto)
Refresh
CKE
CKE
Power
Down
Write
BST
Write
ROW
ACTIVE
CKE
CKE
Read BST
Active
Power
Down
Read
WRITE
SUSPEND
CKE
CKE
WRITE
Read
Write
READ
CKE
CKE
READ
SUSPEND
POWER
ON
Precharge
Precharge
Data Sheet E0143N10
Automatic sequence
Manual input
11

11 Page







PáginasTotal 30 Páginas
PDF Descargar[ Datasheet UPD4516161D.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
UPD451616116M Bit Synchronous DRAMNEC
NEC
UPD4516161A16M Bit Synchronous DRAMNEC
NEC
UPD4516161D16M Bit Synchronous DRAMElpida
Elpida
UPD4516161G5A16M Bit Synchronous DRAMNEC
NEC

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar