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PDF TC58DAMxxx Data sheet ( Hoja de datos )
| Número de pieza | TC58DAMxxx | |
| Descripción | 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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TENTATIVE
TC58DVM72A1FT00/ TC58DVM72F1FT00
TC58DAM72A1FT00/ TC58DAM72F1FT00
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
128-MBIT (16M u 8 BITS/8M x 16BITS) CMOS NAND E2PROM
DESCRIPTION
The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable
Read-Only Memory (NAND E2PROM) organized as 528 bytes/264 words u 32 pages u 1024 blocks. The device uses
dual power supplies (2.7 V to 3.6 V for VCC and 1.65 V to 1.95 V for VCCQ ). The device has a 528-byte/264-words
static register which allows program and read data to be transferred between the register and the memory cell array
in 528-byte/256-words increments. The Erase operation is implemented in a single block unit (16 Kbytes 512 bytes:
528 bytes u 32 pages/8k words + 256 words:264 words x 32 pages).
The TC58DxM72x1xxxx is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
FEATURES
x Organization
TC58DxM72A1xxxx
Memory cell allay 528 u 32K u 8
Register
528 u 8
Page size
528 bytes
TC58DxM72F1xxxx
264 x 32k x 16
264 x 16
264 words
Block size
(16K 512) bytes
x Modes
Read, Reset, Auto Page Program
(8k + 256) words
Auto Block Erase, Status Read
x Mode control
Serial input/output
Command control
x Power supply TC58DVM72x1xxxx
Vcc: 2.7V to 3.6V
TC58DAM72x1xxxx
2.7V to 3.6V
Vccq:
2.7V to 3.6V
1.65V to 1.95V
x Program/Erase Cycles 1E5 cycle (with ECC)
x Access time
Cell array to register 25 Ps max
Serial Read Cycle 50 ns min
x Operating current
Read (50 ns cycle) 10 mA typ.
Program (avg.)
10 mA typ.
Erase (avg.)
10 mA typ.
Standby
50 PA max.
x Package
TSOP I 48-P-1220-0.50 (Weight:0.53g typ)
000707EBA1
xTOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid
situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to
property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most
recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide
for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
xThe TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
xThe products described in this document are subject to the foreign exchange and foreign trade laws.
xThe information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
xThe information contained herein is subject to change without notice.
2003-01-24 1/34
1 page  
TC58DVM72A1FT00/ TC58DVM72F1FT00
TC58DAM72A1FT00/ TC58DAM72F1FT00
AC CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS
(Ta 0° to 70°C, VCC 2.7 V to 3.6 V)
SYMBOL
PARAMETER
tCLS
tCLH
tCS
tCH
tWP
tALS
tALH
tDS
tDH
tWC
tWH
tWW
tRR
tRP
tRC
tREA
tCEA
tALEA
tCEH
tREAID
tOH
tRHZ
tCHZ
tREH
tIR
tRSTO
tCSTO
tRHW
tWHC
tWHR
tR
tWB
tAR2
tRB
CLE Setup Time
CLE Hold Time
CE Setup Time
CE Hold Time
Write Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
WP High to WE Low
Ready to RE Falling Edge
Read Pulse Width
Read Cycle Time
RE Access Time (Serial Data Access)
CE Access Time (Serial Data Access,ID Read)
ALE Access Time (ID Read)
CE High Time for Last Address in Serial Read Cycle
RE Access Time (ID Read)
Data Output Hold Time
RE High to Output High Impedance
CE High to Output High Impedance
RE High Hold Time
Output-High-impedance-to- RE Falling Edge
RE Access Time (Status Read)
CE Access Time (Status Read)
RE High to WE Low
WE High to CE Low
WE High to RE Low
Memory Cell Array to Starting Address
WE High to Busy
ALE Low to RE Low (Read Cycle)
RE Last Clock Rising Edge to Busy(in Sequential Read)
tCRY CE High to Ready(When interrupted by CE in Read Mode)
tRST Device Reset Time (Read/Program/Erase)
MIN
MAX
UNIT
NOTES
0
10
0
10
25
0
10
20
10
50
15
100
20
35
50
35
45
35
10
30
20
15
0
35
45
0
30
30
25
200
50
200
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Ns (2)
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Ps
ns
ns
ns
1+
tr( RY/BY )
Ps (1)(2)
6/10/500 Ps
AC TEST CONDITIONS
PARAMETER
Input level
Input pulse rise and fall time
Input comparison level
Output data comparison level
Output load
TC58DVxxxxx
2.4 V, 0.4 V
3 ns
1.5 V, 1.5 V
1.5 V, 1.5 V
CL (100 pF) 1 TTL
CONDITION
TC58DAxxxx
VCCQ -0.2 V, 0.2 V
3 ns
0.9 V, 0.9 V
0.9 V, 0.9 V
CL (30 pF)
2003-01-24 5/34
5 Page 
Read Cycle (2) Timing Diagram
CLE
CE
tCLS
tCS
tCLH
tCH
TC58DVM72A1FT00/ TC58DVM72F1FT00
TC58DAM72A1FT00/ TC58DAM72F1FT00
WE
tALH
tALS
tALH
ALE
RE
tDS tDH
tDS tDH
tR
tWB
I/O1
to I/O8
RY/BY
01H
A0 toA7 A9 toA16 A17toA23
Column address
N*
* Read Operation using 01H Command N: 0 to 255
tAR2
tRR tRC
tREA
DOUT
DOUT
DOUT
256 M 256 M 1 527
: VIH or VIL
Read Cycle (3) Timing Diagram
CLE
CE
tCLS
tCS
tCLH
tCH
WE
tALH
tALS
tALH
ALE
RE
tDS tDH
tDS tDH
tR
tWB
I/O1
to I/O8
RY/BY
50H
A0 toA7 A9 toA16 A17toA23
Column address
N*
* Read Operation using 50H Command N: 0 to15
tAR2
tRR tRC
tREA
DOUT
DOUT
DOUT
512 M 512 M 1 527
: VIH or VIL
2003-01-24 11/34
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet TC58DAMxxx.PDF ] | |
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