|
|
PDF 2SC5521 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5521 | |
| Descripción | Horizontal Deflection Transistor Series for TV | |
| Fabricantes | Panasonic | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SC5521 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
|
No Preview Available !
New
Horizontal Deflection Transistor Series for TV
s Overview
Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance
and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe-
operation, despite an absolutely minimal chip area which allows very compact package configuration. These advanced
features contribute to higher performing, more reliable home-use TVs that cost less.
s Features
q Withstands ultrahigh voltage : 1500V/1600V/1700V/1800V/2000V
q Low loss:VCE(sat)<3V
mq Broad area of safe-operation.
.cos Spacifications
UParameter
t4Part No.
e2SC5657
2SC5622/2SC5572
e2SC5518/2SC5523
h2SC5514/2SC5521
S2SC5517/2SC5522
ta2SC5519/2SC5524
2SC5516/2SC5584
a2SC5546
.D2SC5553/2SC5597
2SC5591/2SC5591A
www2SC5686
Package
Now
Compact
packaging
TOP-3E Possible
TOP-3E/3D Possible
TOP-3E/3D Possible
TOP-3E/3D Possible
TOP-3E/3D Possible
TOP-3E/3D Possible
TOP-3E/3L
TOP-3E
TOP-3E/3L
TOP-3E
TOP-3E
Electric Characteristics
Ic
(A)
VCBO
(V)
Damper diode
4
6
1500
7
Built-in
13 Not built-in
6
1600/1700
8
Built-in
20 1500
18
1700
22
Not built-in
20 1700/1800
20 2000
Recommended condition
fH
(kHz)
Screen size
(inch)
to 14
15.75
to 25
to 29
32 to 32
15.75
to 29
to 36
32 to 36
64 to 36
oms Applications
.cqTVs qWide-screen TVs qDigital TVs
.DataSheet4U¦ The products and specifications are subject to change without any notice. Please ask for the latest product standards to guarantee the satisfaction of your product requirements.
wSemiconductor Company, Matsushita Electronics Corporation
ww1 Kotari Yakemachi, Nagaokakyo, Kyoto, 617-8520 Japan Tel. (075) 951-8151
http://www.mec.panasonic.co.jp
E00065BE
New publication, effective from Sep 12 2000.
1 page  
Horizontal Deflection Output Transistor
2SC5518
s Absolute Maximum Ratings
Parameter
Symbol
Collector to base voltage VCBO
Collector to emitter voltage VCES
Emitter to base voltage VEBO
Peak collector current
ICP
Collector current
IC
Base current
IB
Collector power dissipation PC
Junction temperature
Tj
Storage temperature
Rating
1500
1500
5
14*3
7
3.5
40*1
3*2
150
-55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
*1)TC=25°C ,*2)Ta=25°C(Without heat sink)
*3)Non-repetitive peak collector current.
15.5±0.5
φ3.2±0.1
Unit:mm
3.0±0.3
5° 5°
4.0
2.0±0.2
1.1±0.1
5.45±0.3
5°
5°
5°
5°
5.45±0.3
0.7±0.1
123
TOP-3E
s Electrical Characteristics(TC=25°C )
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
ICBO
ICBO
VCB=1000V,IE=0
VCB=1500V,IE=0
- - 50 µA
- - 1 mA
Emitter to base voltage
VEBO
IE=500mA,IC=0
5-
-V
Forward current transfer ratio
Collector to emitter saturation
voltage
fFE
VCE(sat)
Base to emitter saturation voltage VBE(sat)
VCE=5V,IC=5A
IC=5A,IB=1A
IC=5A,IB=1A
5- 9
- - 3V
- - 1.5 V
Transition frequency
fT VCE=10V,IC=0.1A,f=0.5MHz - 3 - MHz
Storage time
Tstg IC=5A,IB1=1A,IB2=2A
- - 0.5 µs
Fall time
Tf IC=5A,IB1=1A,IB2=2A - - 5 µs
Diode characteristics
VF
IF=5A
- - -2 V
5 Page 
Horizontal Deflection Output Transistor
2SC5686
s Absolute Maximum Ratings
Parameter
Symbol
Collector to base voltage VCBO
Collector to emitter voltage VCES
Collector to emitter voltage VCEO
Emitter to base voltage VEBO
Peak collector current
ICP
Collector current
IC
Base current
IB
Collector power dissipation PC
Junction temperature
Tj
Storage temperature
Tstg
Rating
2000
2000
600
7
30*3
20
11
70*1
3.5*2
150
-55 to +150
Unit
V
V
V
V
A
A
A
W
°C
°C
*1)TC=25°C *2)Ta=25°C (Without heat sink)
*3)Non-repetitive peak collector current.
s Electrical Characteristics(TC=25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO
ICBO
VCB=1000V,IE=0
VCB=2000V,IE=0
Emitter cutoff current
IEBO
VEB=7V,IC=0
Forward current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation voltage
fFE
VCE(sat)
VBE(sat)
VCE=5V,IC=10A
IC=10A,IB=2.5A
IC=10A,IB=2.5A
Transition frequency
fT VCE=10V,IC=0.1A,f=0.5MHz
Fall time
Tf IC=10A,IB1=2.5A,IB2=-5.0A
Storage time
Tstg IC=10A,IB1=2.5A,IB2=-5.0A
15.5±0.5
φ3.2±0.1
Unit:mm
3.0±0.3
5° 5°
4.0
2.0±0.2
1.1±0.1
5.45±0.3
5°
5°
5°
5°
5.45±0.3
0.7±0.1
123
TOP-3E
min typ max Unit
- - 50 µA
- - 1 mA
- - 50 µA
7 - 14
- - 3V
- - 1.5 V
- 3 - MHz
- - 0.2 µs
- - 3.0 µs
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet 2SC5521.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SC5521 | Horizontal Deflection Transistor Series for TV | Panasonic |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |