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PDF FLL107ME Data sheet ( Hoja de datos )
| Número de pieza | FLL107ME | |
| Descripción | L-BAND MEDIUM & HIGH POWER GAAS FET | |
| Fabricantes | Eudyna Devices | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FLL107ME (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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FLL107ME
L-Band Medium & High Power GaAs FET
FEATURES
• High Output Power: P1dB=29.5dBm (Typ.)
• High Gain: G1dB=13.5dB (Typ.)
• High PAE: ηadd=47% (Typ.)
• Proven Reliability
• Hermetically Sealed Package
DESCRIPTION
The FLL107ME is a Power GaAs FET that is specifically designed to
provide high power at L-Band frequencies with gain, linearity and
efficiency superior to that of silicon devices. The performance in
multitone environments for Class AB operation make them ideally suited
for base station applications. This device is assembled in hermetic
metal/ceramic package.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
Pt Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 4.8 and -0.5 mA respectively with
gate resistance of 400Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
15
-5
4.16
-65 to +175
175
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
IDSS
gm
Vp
VGSO
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 200mA
VDS = 5V, IDS = 15mA
IGS = -15µA
-
-
-1.0
-5
Limit
Typ. Max.
300 450
150 -
-2.0 -3.5
--
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS = 10V
IDS ≈ 0.6IDSS (Typ.),
f = 2.3GHz
28.5 29.5 -
12.5 13.5 -
Unit
V
V
W
°C
°C
Unit
mA
mS
V
V
dBm
dB
Power-added Efficiency
ηadd
- 47 -
%
Thermal Resistance
CASE STYLE: ME
Rth Channel to Case
- 25 36
°C/W
G.C.P.: Gain Compression Point
Edition 1.2
October 2004
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FLL107ME.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| FLL107ME | L-BAND MEDIUM & HIGH POWER GAAS FET |  Fujitsu |
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