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PDF DIM800FSM17-A000 Data sheet ( Hoja de datos )
| Número de pieza | DIM800FSM17-A000 | |
| Descripción | Single Switch IGBT Module Preliminary Information | |
| Fabricantes | Dynex | |
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Replaces May 2001, version DS5461-1.0
FEATURES
s 10µs Short Circuit Withstand
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
DIM800FSM17-A000
www.DataSheet4U.com
DIM800FSM17-A000
Single Switch IGBT Module
Preliminary Information
DS5461-1.0 May 2001
KEY PARAMETERS
VCES
1700V
VCE(sat) *
(typ)
2.7V
IC
(max)
800A
IC(PK)
(max)
1600A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
s Inverters
s Motor Controllers
s Traction Drives
The Powerline range of modules includes half bridge,
chopper, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM800FSM17-A000 is a single switch 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand. This module is
optimised for traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM800FSM17-A000
Note: When ordering, please use the whole part number.
Aux C
External connection
C1 C2
G
Aux E
E1 E2
External connection
Fig. 1 Single switch circuit diagram
Aux C
E1
Aux E
C1
G
E2 C2
Outline type code: F
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10
1 page  
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
td(off)
t
f
EOFF
td(on)
tr
E
ON
Qg
Qrr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
t
d(on)
tr
E
ON
Qrr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
DIM800FSM17-A000
www.DataSheet4U.com
Test Conditions
IC = 800A
VGE = ±15V
VCE = 900V
R
G(ON)
=
R
G(OFF)
=
2.2Ω
L ~ 100nH
I = 800A, V = 900V,
FR
dIF/dt = 4000A/µs
Min. Typ. Max. Units
- 1250 -
ns
- 170 - ns
- 230 - mJ
- 250 - ns
- 250 - ns
- 220 - mJ
- 9.0 - µC
- 200 - µC
- 460 -
A
- 130 - mJ
Test Conditions
IC = 800A
V
GE
=
±15V
VCE = 900V
RG(ON) = RG(OFF) = 2.2Ω
L ~ 100nH
IF = 800A, VR = 900V,
dI /dt
F
=
4000A/µs
Min. Typ. Max. Units
- 1500 -
ns
- 200 - ns
- 360 - mJ
- 400 - ns
- 250 - ns
- 340 - mJ
- 330 - µC
- 530 -
A
- 200 - mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
5/10
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet DIM800FSM17-A000.PDF ] | |
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