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PDF DG648BH45 Data sheet ( Hoja de datos )
| Número de pieza | DG648BH45 | |
| Descripción | Gate Turn-off Thyristor | |
| Fabricantes | Dynex | |
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Replaces March 1998 version, DS4093-2.3
DG648BH45
DG648BH45
Gate Turn-off Thyristor
DS4093-3.0 January 2000
APPLICATIONS
s Variable speed A.C. motor drive inverters (VSD-AC)
s Uninterruptable Power Supplies
s High Voltage Converters
s Choppers
s Welding
s Induction Heating
s DC/DC Converters
KEY PARAMETERS
ITCM
VDRM
IT(AV)
dVD/dt
diT/dt
2000A
4500V
745A
1000V/µs
300A/µs
FEATURES
s Double Side Cooling
s High Reliability In Service
s High Voltage Capability
s Fault Protection Without Fuses
s High Surge Current Capability
s Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements
VOLTAGE RATINGS
Outline type code: H.
See Package Details for further information.
Type Number
DG648BH45
Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage
VDRM
V
VRRM
V
4500
16
Conditions
Tvj = 125oC, IDM = 50mA,
I = 50mA
RRM
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
ITCM
I
T(AV)
I
T(RMS)
Repetitive peak controllable on-state current VD = VDRM, Tj = 125oC, diGQ/dt = 40A/µs, Cs = 2.0µF 2000
Mean on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
745
RMS on-state current
T = 80oC. Double side cooled. Half sine 50Hz.
HS
1170
Units
A
A
A
1/19
1 page  
3000
Conditions:
Tj = 125˚C, VDM = VDRM,
dIGQ/dt = 40A/µs
2000
DG648BH45
1000
0.020
0
0 1.0 2.0 3.0 4.0
Snubber capacitance CS - (µF)
Fig.3 Maximum dependence of ITCM on CS
0.015
dc
0.010
0.005
0
0.001
0.01
0.1
Time - (s)
1.0
10
Fig.4 Maximum (limit) transient thermal impedance - double side cooled
40
30
20
10
0
0.0001
0.001
0.01
Pulse duration - (s)
0.1
Fig.5 Surge (non-repetitive) on-state current vs time
1.0
5/19
5 Page 
10000
8000
Conditions:
Tj = 125˚C,
CS = 2.0µF,
dIGQ/dt = 40A/µs
6000
4000
VDRM
0.75x VDRM
0.5x VDRM
DG648BH45
2000
0
0
500
1000
1500
2000
2500
On-state current IT - (A)
FIG 17FTigU.R17NTOurFnF-oEffNeEneRrGgyYvs oOn-NstaSteTAcuTrEreCntURRENT
12000
10000
Conditions:
Tj = 125˚C,
CS = 2.0µF,
IT = 2000A
VDRM
3000
8000
0.75x VDRM
6000
0.5x VDRM
4000
20 30 40 50 60 70
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current
11/19
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet DG648BH45.PDF ] | |
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