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PDF DG612 Data sheet ( Hoja de datos )
| Número de pieza | DG612 | |
| Descripción | High-Speed / Low-Glitch D/CMOS Analog Switches | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de DG612 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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DG611/612/613
Vishay Siliconix
High-Speed, Low-Glitch D/CMOS Analog Switches
FEATURES
D Fast Switching— tON: 12 ns
D Low Charge Injection: "2 pC
D Wide Bandwidth: 500 MHz
D 5-V CMOS Logic Compatible
D Low rDS(on): 18 W
D Low Quiescent Power : 1.2 nW
D Single Supply Operation
BENEFITS
D Improved Data Throughput
D Minimal Switching Transients
D Improved System Performance
D Easily Interfaced
D Low Insertion Loss
D Minimal Power Consumption
APPLICATIONS
D Fast Sample-and-Holds
D Synchronous Demodulators
D Pixel-Rate Video Switching
D Disk/Tape Drives
D DAC Deglitching
D Switched Capacitor Filters
D GaAs FET Drivers
D Satellite Receivers
DESCRIPTION
The DG611/612/613 feature high-speed low-capacitance
lateral DMOS switches. Charge injection has been minimized
to optimize performance in fast sample-and-hold applications.
Each switch conducts equally well in both directions when on
and blocks up to 16 Vp-p when off. Capacitances have been
minimized to ensure fast switching and low-glitch energy. To
achieve such fast and clean switching performance, the
DG611/612/613 are built on the Vishay Siliconix proprietary
D/CMOS process. This process combines n-channel DMOS
switching FETs with low-power CMOS control logic and
drivers. An epitaxial layer prevents latchup.
The DG611 and DG612 differ only in that they respond to
opposite logic levels. The versatile DG613 has two normally
open and two normally closed switches. It can be given various
configurations, including four SPST, two SPDT, one DPDT.
For additional information see Applications Note AN207
(FaxBack number 70605).
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG611
IN1 1
D1 2
S1 3
V– 4
GND 5
S4 6
D4 7
IN4 8
Dual-In-Line
and SOIC
Top View
16 IN2
15 D2
14 S2
13 V+
12 VL
11 S3
10 D3
9 IN3
DG611
D1 IN1 NC IN2 D2
Key
3 2 1 20 19
S1
V–
NC
GND
S4
4
5
6
7
8
LCC
Top View
18 S2
17 V+
16 NC
15 VL
14 S3
9 10 11 12 13
D4 IN4 NC IN3 D3
Four SPST Switches per Package
TRUTH TABLE
Logic DG611 DG612
0 ON OFF
1
OFF
ON
Logic “0” v 1 V
Logic “1” w 4 V
Document Number: 70057
S-00399—Rev. G, 13-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-1
1 page  
DG611/612/613
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and Power Supply Voltages
400
IS = –1 mA
350
V+ = 12 V
300 V– = –5 V
V+ = 5 V
250 V– = –5 V
200 V+ = 15 V
V– = –3 V
150
100
50
0
–5 –4 –2
02468
VD – Drain Voltage (V)
10 12
rDS(on) vs. VD and Temperature
400
V+ = 15 V
350 V– = –3 V
IS = –1 mA
300
250
200
150
100
50
0
–4
25_C
125_C
–55_C
–2 0 2 4 6 8 10
VD – Drain Voltage (V)
12
Leakage Current vs. Analog Voltage
3
V+ = 15 V
V– = –3 V
2
10 nA
1 nA
Leakage Currents vs. Temperature
1
IS(off), ID(off)
0
–1
–2 ID(on)
100 pA
10 pA
1 pA
ID(on)
IS(off), ID(off)
–3
–4
–2 0 2 4 6 8
VD or VS – Drain or Source Voltage (V)
10
0.1 pA
–55 –25
0 25 50 75
Temperature (_C)
100 125
Input Switching Threshold vs. VL
6
V+ = 15 V
5 V– = –3 V
4
3
2
1
0
0 5 10
VL – Logic Supply Voltage (V)
15
Switching Times vs. Temperature
24
22
20
18 tON
16
14 tOFF
12
10
8
6 V+ = 15 V
V– = –3 V
4 RL = 300 W
2 CL = 10 pF
0
–55 –35 –15 5 25 45 65 85 105 125
Temperature (_C)
Document Number: 70057
S-00399—Rev. G, 13-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet DG612.PDF ] | |
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