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PDF DG408BP45 Data sheet ( Hoja de datos )

Número de pieza DG408BP45
Descripción Gate Turn-off Thyristor
Fabricantes Dynex 
Logotipo Dynex Logotipo



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No Preview Available ! DG408BP45 Hoja de datos, Descripción, Manual

Replaces March 1998 version, DS4091-2.3
DG408BP45
DG408BP45
Gate Turn-off Thyristor
DS4091-3.0 January 2000
APPLICATIONS
s Variable speed A.C. motor drive inverters (VSD-AC)
s Uninterruptable Power Supplies
s High Voltage Converters
s Choppers
s Welding
s Induction Heating
s DC/DC Converters.
KEY PARAMETERS
ITCM
VDRM
IT(AV)
dVD/dt
diT/dt
1000A
4500V
320A
1000V/µs
300A/µs
FEATURES
s Double Side Cooling
s High Reliability In Service
s High Voltage Capability
s Fault Protection Without Fuses
s High Surge Current Capability
s Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements
VOLTAGE RATINGS
Outline type code: P.
See Package Details for further information.
Type Number
DG408BP45
Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage
VDRM
V
VRRM
V
4500
16
Conditions
Tvj = 125oC, IDM = 50mA,
I = 50mA
RRM
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
ITCM
I
T(AV)
I
T(RMS)
Repetitive peak controllable on-state current VD = VDRM, Tj = 125oC, diGQ/dt = 30A/µs, Cs = 1.0µF 1000
Mean on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
320
RMS on-state current
T = 80oC. Double side cooled. Half sine 50Hz.
HS
500
Units
A
A
A
1/19

1 page




DG408BP45 pdf
DG408BP45
0.05
0.04
dc
0.03
0.02
0.01
0
0.001
0.01
0.1
1.0
Time - (s)
10
Fig.4 Maximum (limit) transient thermal impedance - double side cooled
20
100
15
10
5
0
0.0001
0.001
0.01
Pulse duration - (s)
0.1
Fig.5 Surge (non-repetitive) on-state current vs time
1.0
5/19

5 Page





DG408BP45 arduino
5000
4000
Conditions:
Tj = 125˚C,
CS = 1.0µF,
dIGQ/dt = 30A/µs
3000
2000
DG408BP45
VDRM
0.75x VDRM
0.5x VDRM
1000
0
0
250
500
750
1000
1250
1500
On-state current IT - (A)
Fig.17 Turn-off energy vs on-state current
4500
4000
Conditions:
Tj = 125˚C,
CS = 1.0µF,
IT = 1000A
VDRM
0.75x VDRM
3500
3000
0.5x VDRM
2500
10 20 30 40 50 60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current
11/19

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