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PDF DFB20T Data sheet ( Hoja de datos )
| Número de pieza | DFB20T | |
| Descripción | 2.0A Power Rectifier | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number:EN2406
DFB20T
Diffused Junction Type Silicon Diode
2.0A Power Rectifier
Features
· High-speed switching use.
· Reverse recovery time trr=0.15µs max (B, C, E, G).
trr=0.3µs max (J, L).
· Peak reverse voltage:VRM=100 to 1000V
· Average Rectified current IO=2.0A
Package Dimensions
unit:mm
1177
[DFB20T]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
C:Cathode
A:Anode
Parameter
Peak Reverse Voltage
Average Recitified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
Conditions
VRM
IO
IFSM
Tj
Ta=40˚C
50Hz sine wave, 1 cycle
Tstg
DFB20TB
100
→
→
→
→
DFB20TC
200
→
→
→
→
DFB20TE DFB20TG
400 600
→ 2.0
→ 120
→ 150
→ –40 to +150
Unit
V
A
A
˚C
˚C
Parameter
Peak Reverse Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
Conditions
VRM
IO
IFSM
Tj
Ta=40˚C
50Hz sine wave, 1 cycle
Tstg
DFB20TJ DFB20TL
800 1000
→ 2.0
→ 70
→ 125
→ –40 to +150
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Forward Voltage
Reverse Current
Reverse Recovery Time
VF
IR
trr
Reverse Recovery Time Test Circuit
IF=2.0A (B, C, E, G)
IF=2.0A (J, L)
VR:At each VRM
IF=2mA, VR=15V (B,C, E, G)
IF=2mA, VR=15V (J, L)
Unit
V
A
A
˚C
˚C
Ratings
min typ max
Unit
1.2 V
1.5 V
10 µA
0.15 µs
0.3 µs
Unit (resistance:Ω, capacitance:F)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/5138TA, TS No.2406-1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet DFB20T.PDF ] | |
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