|
|
PDF BB403M Data sheet ( Hoja de datos )
| Número de pieza | BB403M | |
| Descripción | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier | |
| Fabricantes | Hitachi | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BB403M (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
BB403M
Build in Biasing Circuit MOS FET IC
VHF/UHF RF Amplifier
ADE-208-699A (Z)
2nd. Edition
Nov. 1998
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High forward transfer admittance;
(|yfs| = 42 mS typ. at f = 1 kHz)
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4R (SOT-143 var.)
Outline
MPAK-4R
3
4
2
1 1. Source
2. Drain
3. Gate2
4. Gate1
Notes: 1. Marking is “CX–”.
2. BB403M is individual type number of HITACHI BBFET.
1 page  
Maximum Channel Power
Dissipation Curve
200
150
100
50
0 50 100 150 200
Ambient Temperature Ta (°C)
BB403M
Typical Output Characteristics
25
VG2S = 4 V
V G1= VDS
20
15
10
634583376090000kkkkΩkΩΩΩΩ
1.5 MΩ
5 2.2 MΩ
1 MΩ 820 kΩ
0 1 2345
Drain to Source Voltage VDS (V)
Drain Current vs.
Drain to Source Voltage
25 VG2S = 4 V
1.5 V
1.4 V
20
1.3 V
15
1.2 V
10 1.1 V
1.0 V
5
VG1S = 0.9 V
0 1 2345
Drain to Source Voltage V DS (V)
Drain Current vs.
Gate1 to Source Voltage
25
4 V 2.5 V
V DS = 5 V
20
3.5 V
2V
3V
15
1.5 V
10
5
VG2S = 1 V
0 4.0 8.0 1.2 1.6 2.0
Gate1 to Source Voltage VG1S (V)
5
5 Page 
BB403M
S11 Parameter vs. Frequency
.8 1
.6
.4
.2
1.5
2
3
4
5
10
0 .2 .4 .6 .8 1 1.5 2 3 4 5 10
–10
–.2 –5
–4
–.4
–.6
–.8 –1
–3
–2
–1.5
Test Condition : VDS= 5 V , VG1 = 5 V
VG2S = 4 V , R G = 470 k Ω
Zo =50 Ω
50 to 1000 MHz (50 MHz step)
S21 Parameter vs. Frequency
90° Scale: 1 / div.
120°
60°
150°
30°
180°
0°
–150°
–30°
–120°
–90°
–60°
Test Condition : VDS= 5 V , VG1 = 5 V
VG2S = 4 V , R G = 470 k Ω
Zo =50 Ω
50 to 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
90° Scale: 0.002 / div.
120°
60°
150°
30°
180°
0°
–150°
–30°
–120°
–90°
–60°
Test Condition : VDS= 5 V , VG1 = 5 V
VG2S = 4 V , R G = 470 k Ω
Zo =50 Ω
50 to 1000 MHz (50 MHz step)
S22 Parameter vs. Frequency
.8 1
.6
.4
.2
1.5
2
3
4
5
10
0 .2 .4 .6 .8 1 1.5 2 3 4 5 10
–10
–.2 –5
–4
–3
–.4
–2
–.6
–.8 –1
–1.5
Test Condition : VDS= 5 V , VG1 = 5 V
VG2S = 4 V , R G = 470 k Ω
Zo =50 Ω
50 to 1000 MHz (50 MHz step)
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet BB403M.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BB403 | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier | Hitachi |
| BB403M | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier | Hitachi |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |