(PDF) BAX12 Datasheet - Controlled avalanche diode

Número de pieza	BAX12
Descripción	Controlled avalanche diode
Fabricantes	Philipss
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No Preview Available ! DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product speciﬁcation Supersedes data of April 1996 1996 Sep 17 1 page Philips Semiconductors Controlled avalanche diode Product speciﬁcation BAX12 handbook, full pagewidth 107 IR (nA) 106 105 104 103 102 MBG696 10 0 VR = 90 V. Solid line; maximum values. Dotted line; typical values. 100 Tj (oC) 200 Fig.5 Reverse current as a function of junction temperature. 40 handbook, halfpage Cd (pF) 30 20 MGD003 handbook, half age 103 PRRM (W) 102 (1) 10 10 MBG701 0 0 10 20 30 VR (V) f = 1 MHz; Tj = 25 °C. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 1 10−2 10−1 1 t (ms) 10 Solid line; rectangular waveform; δ ≤ 0.01. Dotted line; triangular waveform; δ ≤ 0.02. (1) Limited by IRMM = 600 mA. Fig.7 Maximum permissible repetitive peak reverse power as a function of the pulse duration T ≥ 50 ms; Tj = 25 °C. 1996 Sep 17 5 5 Page

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