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PDF 2N2857 Data sheet ( Hoja de datos )
| Número de pieza | 2N2857 | |
| Descripción | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N2857 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Silicon NPN, To-72 packaged UHF Transistor
• 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC
• Maximum Unilateral Gain = 13 dB (typ) @ 500 MHz
2N2857
2
13
4
1. Emitter
2. Base
3. Collector
4. Case
TO-72
DESCRIPTION:
Silicon NPN transistor, designed for UHF equipment. Applications include low noise amplifier; oscillator, and mixer
applications.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
Thermal Data
P
D
Total Device Dissipation @ TA = 25ºC
Derate above 25ºC
Value
15
30
2.5
40
200
1.14
Unit
Vdc
Vdc
Vdc
mA
mWatts
mW/ ºC
MSC1066.PDF 3-10-99
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2N2857.PDF ] | |
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