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PDF 2N2060 Data sheet ( Hoja de datos )
| Número de pieza | 2N2060 | |
| Descripción | UNITIZED DUAL NPN SILICON TRANSISTOR | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N2060 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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TECHNICAL DATA
UNITIZED DUAL NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/270
Devices
2N2060
2N2060L
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N2060
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
VCEO
VCBO
VEBO
IC
60
100
7.0
500
One Both
Vdc
Vdc
Vdc
mAdc
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
Section Sections
PT
540 600
1.5 2.12
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
1) Derate linearly 3.08 mW/0C for TA > 250C for one section, 3.48 mW/0C for both sections
2) Derate linearly 8.6 mW/0C for TC > 250C for one section, 12.1 mW/0C for both sections
mW
W
0C
ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(3)
RBE ≤ 10 Ω, IC = 10 mAdc
Collector-Emitter Breakdown Voltage
IC = 30 mAdc
Collector-Base Cutoff Current
V(BR)CER
V(BR)CEO
VCB = 100 Vdc
ICBO
VCB = 80 Vdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
VEB = 5.0 Vdc
IEBO
Min.
80
60
TO-78*
*See appendix A for
package outline
Max.
Unit
Vdc
Vdc
10 µAdc
2.0 ηAdc
10 µAdc
2.0 ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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| PDF Descargar | [ Datasheet 2N2060.PDF ] | |
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