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PDF 2N1893 Data sheet ( Hoja de datos )
| Número de pieza | 2N1893 | |
| Descripción | SMALL SIGNAL NPN TRANSISTOR | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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® 2N1893
SMALL SIGNAL NPN TRANSISTOR
s GENERAL PURPOSE HIGH VOLTAGE
DEVICE
DESCRIPTION
The 2N1893 is a Silicon Planar Epitaxial NPN
transistor in Jedec TO-39 metal case, designed
for use in high-performance amplifier, oscillator
and switching circuits. It provides greater voltage
swings in oscillator and amplifier circuits and
more protection in inductive switching circuits due
to its 120 V collector-to-base voltage rating.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCER
VCEO
VEBO
IC
Ptot
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (RBE ≤ 10Ω)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Total Dissipation at Tamb ≤ 25 oC
at TC ≤ 25 oC
at TC ≤ 100 oC
Storage Temperature
Max. Operating Junction Temperature
January 2003
Value
120
100
80
7
0.5
0.8
3
1.7
-65 to 175
175
Unit
V
V
V
V
A
W
W
W
oC
oC
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2N1893
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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