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PDF 2N1613 Data sheet ( Hoja de datos )

Número de pieza 2N1613
Descripción SWITCHES AND UNIVERSAL AMPLIFIERS
Fabricantes STMicroelectronics 
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2N1613
2N1711
SWITCHES AND UNIVERSAL AMPLIFIERS
DESCRIPTION
The 2N1613 and 2N1711 are silicon planar epitaxial
NPN transistors in Jedec TO-39 metal case. They
are designed for use in high-performance amplifier,
oscillator and switching circuits.
The 2N1711 is also used to advantage in amplifiers
where low noise is an important factor.
Products approved to CECC 50002-104 avail-
able on request.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCER
VEBO
IC
Pto t
Tstg, Tj
Parameter
Collector-base Voltage (IE = 0)
Collector-emitter Voltage (RBE 10 )
Emitter-base Voltage (IC = 0)
Collector Current
Total Power Dissipation at T amb 25 °C
at T c as e 25 °C
at T c as e 100 °C
Storage and Junction Temperature
January 1989
V al ue
75
50
7
500
0.8
3
1.7
– 65 to 200
Unit
V
V
V
mA
W
W
W
°C
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2N1613 pdf
2N1613-2N1711
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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