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PDF 2N1488 Datasheet ( Hoja de datos )

Número de pieza 2N1488
Descripción NPN SILICON HIGH POWER TRANSISTOR
Fabricantes Microsemi 
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2N1488 Hoja de datos, Descripción, Manual
TECHNICAL DATA
NPN SILICON HIGH POWER TRANSISTOR
Qualified per MIL-PRF-19500/208
Devices
Qualified Level
2N1487
2N1488
2N1489
2N1490
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TC = 250C (1)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly @ 0.429 W/0C for TC > 250C
Symbol
VCEO
VCBO
VCEX
VEBO
IB
IC
PT
TJ, Tstg
Symbol
RθJC
2N1487 2N1488
2N1498 2N1490
40 55
60 100
60 100
10
3.0
6.0
75
-65 to +200
Max.
2.33
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
2N1487, 2N1489
2N1488, 2N1490
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 200 µAdc
2N1487, 2N1489
2N1488, 2N1490
V(BR)CBO
Collector-Emitter Breakdown Voltage
IC = 0.5 mAdc, VEB = 1.5 Vdc
2N1487, 2N1489
2N1488, 2N1490
V(BR)CEX
Collector-Base Cutoff Current
VCB = 30 Vdc
Emitter-Base Cutoff Current
VEB = 10 Vdc
ICBO
IEBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
0C
TO-33*
(TO-204AA)
Unit
0C/W
*See Appendix A for
Package Outline
Min. Max.
Unit
40 Vdc
55
60 Vdc
100
60 Vdc
100
25 µAdc
25 µAdc
120101
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