DataSheet.es    


PDF 29F040 Data sheet ( Hoja de datos )

Número de pieza 29F040
Descripción 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only / Uniform Sector Flash Memory
Fabricantes Advanced Micro Devices 
Logotipo Advanced Micro Devices Logotipo



Hay una vista previa y un enlace de descarga de 29F040 (archivo pdf) en la parte inferior de esta página.


Total 30 Páginas

No Preview Available ! 29F040 Hoja de datos, Descripción, Manual

PRELIMINARY
Am29F040B
4 Megabit (512 K x 8-Bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Distinctive Characteristics
s 5.0 V ± 10% for read and write operations
— Minimizes system level power requirements
s Manufactured on 0.35 µm process technology
— Compatible with 0.5 µm Am29F040 device
s High performance
— Access times as fast as 55 ns
s Low power consumption
— 20 mA typical active read current
— 30 mA typical program/erase current
— 1 µA typical standby current (standard access
time to active mode)
s Flexible sector architecture
— 8 uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased
— Supports full chip erase
— Sector protection:
A hardware method of locking sectors to prevent
any program or erase operations within that
sector
s Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies bytes at specified addresses
s Minimum 1,000,000 program/erase cycles per
sector guaranteed
s Package options
— 32-pin PLCC, TSOP, or PDIP
s Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply Flash standard
— Superior inadvertent write protection
s Data# Polling and toggle bits
— Provides a software method of detecting
program or erase cycle completion
s Erase Suspend/Erase Resume
— Suspends a sector erase operation to read data
from, or program data to, a non-erasing sector,
then resumes the erase operation
Publication# 21445 Rev: B Amendment/+2
Issue Date: April 1998

1 page




29F040 pdf
PRELIMINARY
PIN CONFIGURATION
A0–A18 = Address Inputs
DQ0–DQ7 = Data Input/Output
CE#
= Chip Enable
WE#
= Write Enable
OE#
= Output Enable
VSS = Device Ground
VCC = +5.0 V single power supply
(see Product Selector Guide for
device speed ratings and voltage
supply tolerances)
LOGIC SYMBOL
19
A0–A18
CE#
OE#
WE#
DQ0–DQ7
8
21445B-5
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed
by a combination of the following:
Am29F040B -55
E
CB
OPTIONAL PROCESSING
Blank = Standard Processing
B = Burn-in
(Contact an AMD representative for more information)
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I = Industrial (–40°C to +85°C)
E = Extended (–55°C to +125°C)
PACKAGE TYPE
P = 32-Pin Plastic DIP (PD 032)
J = 32-Pin Rectangular Plastic Leaded Chip
Carrier (PL 032)
E = 32-Pin Thin Small Outline Package (TSOP)
Standard Pinout (TS 032)
F = 32-Pin Thin Small Outline Package (TSOP)
Reverse Pinout (TSR032)
SPEED OPTION
See Product Selector Guide and Valid Combinations
DEVICE NUMBER/DESCRIPTION
Am29F040B
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Sector Erase Flash Memory
5.0 V Read, Program, and Erase
Valid Combinations
Am29F040B-55
Am29F040B-70
JC, JI, JE, EC, EI, EE, FC, FI, FE
Am29F040B-90
Am29F040B-120
Am29F040B-150
PC, PI, PE,
JC, JI, JE,
EC, EI, EE,
FC, FI, FE
Valid Combinations
Valid Combinations list configurations planned to be sup-
ported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
Am29F040B
5

5 Page





29F040 arduino
PRELIMINARY
Figure 2 illustrates the algorithm for the erase opera-
tion. Refer to the Erase/Program Operations tables in
the “AC Characteristics” section for parameters, and to
the Sector Erase Operations Timing diagram for timing
waveforms.
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to in-
terrupt a sector erase operation and then read data
from, or program data to, any sector not selected for
erasure. This command is valid only during the sector
erase operation, including the 50 µs time-out period
during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program algo-
rithm. Writing the Erase Suspend command during the
Sector Erase time-out immediately terminates the
time-out period and suspends the erase operation. Ad-
dresses are “don’t-cares” when writing the Erase Sus-
pend command.
When the Erase Suspend command is written during a
sector erase operation, the device requires a maximum
of 20 µs to suspend the erase operation. However,
when the Erase Suspend command is written during
the sector erase time-out, the device immediately ter-
minates the time-out period and suspends the erase
operation.
After the erase operation has been suspended, the
system can read array data from or program data to
any sector not selected for erasure. (The device “erase
suspends” all sectors selected for erasure.) Normal
read and write timings and command definitions apply.
Reading at any address within erase-suspended sec-
tors produces status data on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
See “Write Operation Status” for information on these
status bits.
After an erase-suspended program operation is com-
plete, the system can once again read array data within
non-suspended sectors. The system can determine
the status of the program operation using the DQ7 or
DQ6 status bits, just as in the standard program oper-
ation. See “Write Operation Status” for more informa-
tion.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command Sequence”
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the de-
vice has resumed erasing.
START
Write Erase
Command Sequence
Data Poll
from System
No
Data = FFh?
Embedded
Erase
algorithm
in progress
Yes
Erasure Completed
21445B-7
Notes:
1. See the appropriate Command Definitions table for erase
command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
Figure 2. Erase Operation
Am29F040B
11

11 Page







PáginasTotal 30 Páginas
PDF Descargar[ Datasheet 29F040.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
29F0404 Mbit 512Kb x8 / Uniform Block Single Supply Flash MemorySTMicroelectronics
STMicroelectronics
29F0404 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only / Uniform Sector Flash MemoryAdvanced Micro Devices
Advanced Micro Devices
29F040BAM29F040BAMD
AMD

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar