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PDF 28F016XD Data sheet ( Hoja de datos )

Número de pieza 28F016XD
Descripción 16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY
Fabricantes Intel 
Logotipo Intel Logotipo



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28F016XD
16-MBIT (1 MBIT x 16)
DRAM-INTERFACE FLASH MEMORY
n 85 ns Access Time (tRAC)
Supports both Standard and Fast-
Page-Mode Accesses
n Multiplexed Address Bus
RAS# and CAS# Control Inputs
n No-Glue Interface to Many Memory
Controllers
n SmartVoltage Technology
User-Selectable 3.3V or 5V VCC
User-Selectable 5V or 12V VPP
n 0.33 MB/sec Write Transfer Rate
n x16 Architecture
n 56-Lead TSOP Type I Package
n Backwards-Compatible with 28F008SA
Command Set
n 2 µA Typical Deep Power-Down Current
n 1 mA Typical ICC Active Current in Static
Mode
n 32 Separately-Erasable/Lockable
64-Kbyte Blocks
n 1 Million Erase Cycles per Block
n State-of-the-Art 0.6 µm ETOX™ IV Flash
Technology
Intel’s 28F016XD 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing
truly revolutionary high-performance products. Combining its DRAM-like read performance and interface with
the intrinsic nonvolatility of flash memory, the 28F016XD eliminates the traditional redundant memory
paradigm of shadowing code from a slow nonvolatile storage source to a faster execution memory, such as
DRAM, for improved system performance. The innovative capabilities of the 28F016XD enable the design of
direct-execute code and mass storage data/file flash memory systems.
The 28F016XD’s DRAM-like interface with a multiplexed address bus, flexible VCC and VPP voltages, power
saving features, extended cycling, fast program and read performance, symmetrically-blocked architecture,
and selective block locking provide a highly flexible memory component suitable for resident flash component
arrays on the system board or SIMMs. The DRAM-like interface with RAS# and CAS# control inputs allows
for easy migration to flash memory in existing DRAM-based systems. The 28F016XD’s dual read voltage
allows the same component to operate at either 3.3V or 5.0V VCC. Programming voltage at 5.0V VPP
minimizes external circuitry in minimal-chip, space critical designs, while the 12.0V VPP option maximizes
program/erase performance. The x16 architecture allows optimization of the memory-to-processor interface.
Its high read performance combined with flexible block locking enable both storage and execution of
operating systems/application software and fast access to large data tables. The 28F016XD is manufactured
on Intel’s 0.6 µm ETOX IV process technology.
December 1996
Order Number: 290533-004

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28F016XD pdf
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1.0 INTRODUCTION
The documentation of the Intel 28F016XD flash
memory device includes this datasheet, a detailed
user’s manual, and a number of application notes
and design tools, all of which are referenced in
Appendix B.
The datasheet is intended to give an overview of
the chip feature-set and of the operating AC/DC
specifications. The 16-Mbit Flash Product Family
User’s Manual provides complete descriptions of
the user modes, system interface examples and
detailed descriptions of all principles of operation.
It also contains the full list of software algorithm
flowcharts, and a brief section on compatibility
with the Intel 28F008SA.
Significant 28F016XD feature revisions occurred
between datasheet revisions 290533-001 and
290533-002. These revisions center around
removal of the following features:
All page buffer operations (read, write,
programming, Upload Device Information)
Command queuing
Software Sleep and Abort
Erase all Unlocked Blocks
Device Configuration command
In addition, a significant 28F016XD change
occurred between datasheet revisions 290532-002
and 290532-003. This change centers around the
addition of a 3/5# pin to the device’s pinout
configuration. Figure 2 shows the 3/5# pin
assignment for the TSOP Type 1 package.
Intel recommends that all customers obtain the
latest revisions of 28F016XD documentation.
1.1 Product Overview
The 28F016XD is a high-performance, 16-Mbit
(16,777,216-bit) block erasable, nonvolatile
random access memory, organized as
1 Mword x 16. The 28F016XD includes thirty-two
32-KW (32,768 word) blocks. A chip memory map
is shown in Figure 3.
The implementation of a new architecture, with
many enhanced features, will improve the device
operating characteristics and result in greater
product reliability and ease-of-use as compared to
28F016XD FLASH MEMORY
other flash memories. Significant features of the
28F016XD include:
No-Glue Interface to Memory Controllers
Improved Word Program Performance
SmartVoltage Technology
Selectable 3.3V or 5.0V VCC
Selectable 5.0V or 12.0V VPP
Block Program/Erase Protection
The 28F016XD's multiplexed address bus with
RAS# and CAS# inputs allows for a “No Glue”
interface to many existing in-system memory
controllers. As such, 28F016XD-based SIMMs
(72-pin JEDEC Standard) offer attractive
advantages over their DRAM counterparts in many
applications. For more information on 28F016XD-
based SIMM designs, see the application note
referenced at the end of this datasheet.
The 28F016XD incorporates SmartVoltage
technology, providing VCC operation at both 3.3V
and 5.0V and program and erase capability at VPP
= 12.0V or 5.0V. Operating at VCC = 3.3V, the
28F016XD consumes less than 60% of the power
consumption at 5.0V VCC, while 5.0V VCC provides
the highest read performance capability. VPP =
5.0V operation eliminates the need for a separate
12.0V converter, while VPP = 12.0V maximizes
program/erase performance. In addition to the
flexible program and erase voltages, the dedicated
VPP gives complete code protection with VPP
VPPLK.
A 3/5# input pin configures the device’s internal
circuitry for optimal 3.3V or 5.0V read/program
operation.
A Command User Interface (CUI) serves as the
system interface between the microprocessor or
microcontroller and the internal memory operation.
Internal Algorithm Automation allows word
programs and block erase operations to be
executed using a Two-Write command sequence
to the CUI in the same way as the 28F008SA 8-
Mbit FlashFile™ memory.
Software Locking of Memory Blocks is an added
feature of the 28F016XD as compared to the
28F008SA. The 28F016XD provides selectable
block locking to protect code or data such as
direct-executable operating systems or application
code. Each block has an associated nonvolatile
lock-bit which determines the lock status of the
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28F016XD arduino
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3.0 MEMORY MAPS
28F016XD FLASH MEMORY
A [19-0]
FFFFF
F8000
F7FFF
F0000
EFFFF
E8000
E7FFF
E0000
DFFFF
D8000
D7FFF
D0000
CFFFF
C8000
C7FFF
C0000
BFFFF
B8000
B7FFF
B0000
A8FFF
A8000
A7FFF
A0000
9FFFF
98000
97FFF
90000
8FFFF
88000
87FFF
80000
7FFFF
78000
77FFF
70000
6FFFF
68000
67FFF
60000
5FFFF
58000
57FFF
50000
4FFFF
48000
47FFF
40000
3FFFF
38000
37FFF
30000
2FFFF
28000
27FFF
20000
1FFFF
18000
17FFF
10000
0FFFF
08000
07FFF
00000
32-Kword Block 31
32-Kword Block 30
32-Kword Block 29
32-Kword Block 28
32-Kword Block 27
32-Kword Block 26
32-Kword Block 25
32-Kword Block 24
32-Kword Block 23
32-Kword Block 22
32-Kword Block 21
32-Kword Block 20
32-Kword Block 19
32-Kword Block 18
32-Kword Block 17
32-Kword Block 16
32-Kword Block 15
32-Kword Block 14
32-Kword Block 13
32-Kword Block 12
32-Kword Block 11
32-Kword Block 10
32-Kword Block 9
32-Kword Block 8
32-Kword Block 7
32-Kword Block 6
32-Kword Block 5
32-Kword Block 4
32-Kword Block 3
32-Kword Block 2
32-Kword Block 1
32-Kword Block 0
NOTE:
The upper 10 bits (A19–10) reflect 28F016XD addresses A9–0, latched by RAS#.
The lower 10 bits (A9–0) reflect 28F016XD addresses A9–0, latched by CAS#.
Figure 3. 28F016XD Memory Map
0533_03
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