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PDF TG2213S Data sheet ( Hoja de datos )
| Número de pieza | TG2213S | |
| Descripción | GaAs Linear Integrated Circuit GaAs Monolithic | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TG2213S (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
TG2213S
TG2213S
RF SPDT Switch
Antenna switch for Bluetooth class 2, 3
Diversity antenna switching
Filter switching for mobile communication
Local signal switching
Features
· Low insertion Loss: LOSS = 0.35dB (typ.) @1.0 GHz
= 0.45dB (typ.) @2.5 GHz
· High isolation: ISL = 24dB (typ.) @1.0 GHz
= 22dB (typ.) @2.5 GHz
· Low voltage operation: VCON = 0 V/2.7 V
· Small package: sES6 package (1.5 × 1.5 × 0.52 mm)
Pin Assignment, Marking
(top view)
VC1 RFcom VC2
654
Block Diagram
VC1 RFcom VC2
654
UP
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2Q1A
Weight: 2.1 mg (typ.)
123
RF1 GND RF2
123
RF1 GND RF2
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Control voltage
Input power
Total power dissipation
Operating temperature range
Storage temperature range
VC1
VC2
Pi
PD
(Note)
Topr
Tstg
6
6
200
100
−40 to 85
−55 to 125
Note: When mounted on the glass epoxy of 2.5 cm2 ´ 1.6 t
Unit
V
mW
mW
°C
°C
1 2002-11-14
1 page  
LOSS – Pin (RFcom – RF1)
0
0.5
1
1.5
2
2.5
3
VC1 = 2.7 V
3.5 VC2 = 0 V
f = 2.5 GHz
4
0
10
20
Pin (dB)
30
TG2213S
LOSS – Pin (RFcom – RF2)
0
0.5
1
1.5
2
2.5
3
VC1 = 0 V
3.5 VC2 = 2.7 V
f = 2.5 GHz
4
0
10
20
Pin (dB)
30
ISL – Pin (RFcom – RF1)
0
VC1 = 0 V
5 VC2 = 2.7 V
f = 2.5 GHz
10
15
20
25
0 5 10 15 20 25
Pin (dB)
ISL – Pin (RFcom – RF2)
0
VC1 = 2.7 V
5 VC2 = 0 V
f = 2.5 GHz
10
15
20
25
0 5 10 15 20 25
Pin (dB)
LOSS – f (RFcom – RF1)
0
0.5
1
1.5
2
2.5
3
VC1 = 2.7 V
3.5 VC2 = 0 V
RF2 = 50 W
4
0 1.0
2.0
Frequency (GHz)
3.0
LOSS – f (RFcom – RF2)
0
0.5
1
1.5
2
2.5
3
VC1 = 0 V
3.5 VC2 = 2.7 V
RF1 = 50 W
4
0 1.0
2.0
Frequency (GHz)
3.0
5 2002-11-14
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TG2213S.PDF ] | |
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