|
|
PDF GT60J321 Data sheet ( Hoja de datos )
| Número de pieza | GT60J321 | |
| Descripción | The 4th Generation Soft Switching Applications | |
| Fabricantes | Toshiba | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de GT60J321 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
GT60J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60J321
The 4th Generation
Soft Switching Applications
Unit: mm
· Enhancement-mode
· High speed: tf = 0.30 µs (typ.) (IC = 60 A)
· Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter-collector forward
current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Screw torque
DC
1 ms
DC
1 ms
Symbol
VCES
VGES
IC
ICP
IECF
IECPF
PC
Tj
Tstg
¾
Rating
600
±25
60
120
60
120
200
150
-55~150
0.8
Unit
V
V
A
A
W
°C
°C
N･m
Equivalent Circuit
Collector
Gate
Emitter
JEDEC
―
JEITA
―
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
1 2002-01-18
1 page  
Reverse bias SOA
300
100
50
30
10
5
3 Tj <= 125°C
VGE = ±15 V
RG = 18 W
1
1 3 10 30 100 300
Collector-emitter voltage VCE (V)
1000
GT60J321
102
101
100
10-1
rth (t) – tw
Tc = 25°C
Diode
IGBT
10-2
10-130-4
10-3 10-2
10-1
100
101
102
Pulse width tw (s)
100
Common collector
VGE = 0
80
IF – VF
60
Tc = 125°C
40
25
20
-40
0
0 0.4 0.8 1.2 1.6 2.0
Forward voltage VF (V)
Irr, trr – IF
50 500
30 300
10 trr
100
5 50
Irr
3 30
Common collector
di/dt = -100 A/ms
VGE = 0
Tc = 25°C
1 10
0 10 20 30 40 50 60
Forward current IF (A)
1000
500
300
Cj – VR
f = 1 MHz
Tc = 25°C
100
50
30
10
1
3 5 10
30 50 100
300 500
Reverse voltage VR (V)
200
RE
0
Irr, trr – di/dt
20
Common collector
16
IF = 60 A
Tc = 25°C
12
Irr
8
trr
4
0
0 40 80 120 160 200 240
di/dt (A/ms)
5 2002-01-18
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet GT60J321.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| GT60J321 | The 4th Generation Soft Switching Applications | Toshiba |
| GT60J322 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT |  Toshiba Semiconductor |
| GT60J323 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba Semiconductor |
| GT60J323H | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |