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PDF SE1230Q Data sheet ( Hoja de datos )
| Número de pieza | SE1230Q | |
| Descripción | LightCharger 2.5 Gb/s Automatic Gain Control Amplifier Final | |
| Fabricantes | SiGe Semiconductor Inc. | |
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SE1230Q
LightCharger™ 2.5 Gb/s Automatic Gain Control Amplifier
Final
Applications
SONET/SDH-based transmission systems, test
equipment and modules
OC-48 fibre optic modules
Gigabit Ethernet
Fibre Channel
Wideband RF gain block
Features
Single +3.3 V supply
Power dissipation = 230 mW (typ)
Noise figure < 12 dB
Small signal gain = 23.5 dB differential
Fully integrated AGC function
On-chip 50 Ω input and output terminations
Wide bandwidth (–3 dB) > 2.0 GHz
Maximum input level of 200 mVpk
AGC output level of 370 mVpk differential
Loss of signal functionality
Single-ended or differential operation
Minimal external components
Operating ambient temperature range = -40°C to
+85°C
Equivalent to Nortel Networks AC10
Ordering Information
Type
SE1230Q
Package
5 mm, 32 pin LQFP
Remark
None
Functional Block Diagram
Product Description
SiGe Semiconductor offers a portfolio of optical
networking ICs for use in high-performance optical
transmitter and receiver functions, from 155 Mb/s up
to 12.5 Gb/s.
SiGe Semiconductor’s SE1230 is a fully integrated
AGC amplifier aimed primarily at SONET OC-48 and
SDH STM-16 systems. The device may also be used
in any datacom application with input data rates up to
2.5 Gb/s.
The device is designed with differential I/Os and
signal levels compatible with SiGe Semiconductor’s
SE1030 and SE1031 transimpedance amplifiers. A
system block diagram is shown after the functional
description, on page 4.
Optimum performance is provided by differential
connections but with appropriate terminations, the
device can also be used in single-ended mode if
required by the application.
INP
Variable
Output
INN
Gain
Buffer
SE1230
AGC Amp
2.5 Gb/s
OUTP OUTN
Integrator
Rectifier
LOS
LOS_INIT
Rectifier/
Comparator
Vref2
Bandgap
Ref
Vref1
AGC_ADJ
OUTP
OUTN
49-DST-01 Rev 1.4 Apr 29/02
1 of 9
1 page  
SE1230Q
LightCharger™ 2.5 Gb/s Automatic Gain Control Amplifier
Final
Absolute Maximum Ratings
These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage
to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions
defined below.
Symbol
VCC
VIO
IIO
IIO
VESD
Tstg
Parameter
Supply Voltage
Voltage at any input or output
Current sourced into any input or output, except
OUTP and OUTN
Current sourced into pins OUTP and OUTN
Electrostatic Discharge (100 pF, 1.5 kΩ), all pins
Storage Temperature
Min
–0.5
–0.5
–20
–40
–2
–65
Max
5.0
VCC+0.5
20
40
2
150
Unit
V
V
mA
mA
kV
°C
Recommended Operating Conditions
Symbol
VCC
ILOS
RLOSI
CLOSI
IAGC_ADJ
Ta
Parameter
Supply Voltage
LOS Output Load Current
LOS_INIT Resistor
LOS_INIT Capacitor (increase value for slow
power supply rise time)
AGC Threshold Adjust Input Current (on
AGC_ADJ pin) – note 1
Operating Ambient Temperature
Min Typ Max
3.1 3.3 3.5
5
1
1
0 150
–40 85
Note 1: This current can be produced by connecting a suitable resistor between VCC and AGC_ADJ.
Unit
V
mA
kΩ
µF
µA
°C
DC Electrical Characteristics
Symbol
ICC
PD
VAGC_ADJ
VLOS
RT
Parameter
Supply current
Power Dissipation
Open-circuit AGC_ADJ Voltage
Output Low Voltage on LOS, with ILOS = 1 mA
Input/Output Termination Resistance
Min Typ Max
70 100
230 350
0.37
0.4
50
Unit
mA
mW
V
V
Ω
49-DST-01 Rev 1.4 Apr 29/02
5 of 9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SE1230Q.PDF ] | |
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