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PDF SDT12S60 Data sheet ( Hoja de datos )
| Número de pieza | SDT12S60 | |
| Descripción | Silicon Carbide Schottky Diode | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SDT12S60 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Preliminary data
Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode
Revolutionary semiconductor
material - Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on
the switching behavior
No forward recovery
SDT12S60
Product Summary
VRRM
Qc
IF
600 V
30 nC
12 A
P-TO220-2-2.
Type
SDT12S60
Package
P-TO220-2-2.
Ordering Code
Q67040-S4470
Marking
D12S60
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous forward current, TC=100°C
RMS forward current, f=50Hz
IF
I FRMS
Surge non repetitive forward current, sine halfwave IFSM
TC=25°C, tp=10ms
Repetitive peak forward current
I FRM
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
I FMAX
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms
Repetitive peak reverse voltage
i2dt
VRRM
Surge peak reverse voltage
VRSM
Power dissipation, TC=25°C
Operating and storage temperature
Ptot
Tj , Tstg
Pin 1 Pin 2
CA
Value
12
17
36
49
120
6.48
600
600
88.2
-55... +175
Pin 3
Unit
A
A²s
V
W
°C
Page 1
2002-01-14
1 page  
Preliminary data
9 Typ. capacitive charge vs. current slope
Qc=f(diF/dt)
parameter: Tj = 150 °C
40
nC
32
IF *2
IF
28 IF *0.5
24
20
16
12
8
4
0
100 200 300 400 500 600 700 800 A/µs 1000
diF/dt
SDT12S60
Page 5
2002-01-14
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SDT12S60.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SDT12S60 | Silicon Carbide Schottky Diode | Infineon Technologies AG |
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