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PDF SAA3008 Data sheet ( Hoja de datos )
| Número de pieza | SAA3008 | |
| Descripción | Infrared remote control transmitter RECS 80 low voltage | |
| Fabricantes | Philips | |
| Logotipo |  |
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INTEGRATED CIRCUITS
DATA SHEET
SAA3008
Infrared remote control transmitter
(RECS 80 low voltage)
Preliminary specification
File under Integrated Circuits, IC02
December 1988
1 page  
Philips Semiconductors
Infrared remote control transmitter
(RECS 80 low voltage)
Preliminary specification
SAA3008
Where:
(b) Transmission with start-pattern and subsystem address 8 to 20.
Reference time
start pattern T0 toggle bit
S3, S2, S1, S0 subsystem address
A to F
command bits
tW word length
binary values determined by pulse spacing
Fig.3 Data format of remote control signal (REMO).
Fig.4 Waveform for one pulse period at REMO output; for timing values see Table 3.
Oscillator (OSCI, OSCO)
The external components for the oscillator circuit are connected to OSCI and OSCO. The oscillator operates with a
ceramic resonator in the frequency range 350 kHz to 500 kHz, as defined by the resonator. When operating at a supply
voltage of below 3 V a 270 kHz resistor should be connected in parallel with the resonator.
December 1988
5
5 Page 
Philips Semiconductors
Infrared remote control transmitter
(RECS 80 low voltage)
Preliminary specification
SAA3008
RATINGS
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
PARAMETER
Supply voltage range
Input voltage range
Output voltage range
Total power dissipation
DIL package (SOT146)
mini−pack (SO20; SOT163A)
Power dissipation
matrix outputs DRV0N to DRV6N
remote data output REMO
Operating ambient temperature range
Storage temperature range
CONDITIONS
SYMBOL
VDD
VI
VO
MIN.
−0.3
−0.3
−0.3
Ptot −
Ptot −
PO
PO
Tamb
Tstg
−
−
−20
−20
MAX.
+7
VDD + 0.3
VDD + 0.3
300
200
50
200
+70
+125
UNIT
V
V
V
mW
mW
mW
mW
°C
°C
HANDLING
Inputs and outputs are protected against electrostatic charge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices (see ‘Handling MOS Devices’).
CHARACTERISTICS
VSS = 0 V; Tamb = 0 to + 70 °C; unless otherwise specified
PARAMETER
CONDITIONS
SYMBOL
Supply voltage
Supply current active
Standby mode
Oscillator frequency
(ceramic resonator)
Inputs SEN0N to SEN6N
fosc = 455 kHz;
VDD = 3 V
VDD = 4.5 V
VDD = 6 V
Tamb = 25 °C;
VDD = 6 V
VDD
IDD
IDD
IDD
IDD
VDD = 2 to 6.5 V fosc
Input voltage LOW
Input voltage HIGH
Input current
(p-channel pull-up)
VDD = 2 to 6.5 V
VDD = 2 to 6.5 V
VIL
VIH
VIL = 0 V
VDD = 2 V
VDD = 6.5 V
II
II
MIN.
2.0
−
−
−
−
350
−
0.7 VDD
−10
−100
TYP.
−
MAX.
6.5
UNIT
V
0.25 −
0.5 −
1−
−4
mA
mA
mA
µA
− 500 kHz
− 0.3 VDD V
−−
V
−
−100
µA
−
−600
µA
December 1988
11
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet SAA3008.PDF ] | |
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