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PDF SA3603 Data sheet ( Hoja de datos )

Número de pieza SA3603
Descripción Cellular-band low voltage front-end
Fabricantes Philips 
Logotipo Philips Logotipo



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INTEGRATED CIRCUITS
SA3603
Cellular-band low voltage front-end
Preliminary specification
IC17 Data Handbook
1999 Dec 17
Philips
Semiconductors

1 page




SA3603 pdf
Philips Semiconductors
Cellular-band low voltage front-end
Preliminary specification
SA3603
AC ELECTRICAL CHARACTERISTICS
VCC = +2.8 V; fRF = 881 MHz, fVCO = 991 MHz; Tamb = 25°C; unless otherwise stated.
SYMBOL
PARAMETER
TEST CONDITIONS
Overall System
GSYS
System gain
Low Noise Amplifier
fRF
S21
S21
S12
S11
S22
P-1dB
IIP3
RF input frequency range
Gain
Gain in power-down mode
Reverse isolation
Input return loss
Output return loss
Input 1 dB gain compression
Input third order intercept
NF Noise figure
tON/OFF
Mixer
Turn on/off time1
fRF
fIF
PGC
S11M
NFM
P-1dB
IIP3M
IIP2INT
PRFM-IF
tON/OFF
LO Buffer
RF input frequency range
IF input frequency range
Power conversion gain
Input match
SSB noise figure
Input 1 dB gain compression
Input third order intercept
Input second order intercept
RF feedthrough
Turn on/off time1
fLO
PIN
POUT
S11
S22
PLO-IF
PLO-RFM
PLO-RF
Input frequency range
Input power
Output power
Input return loss
Output return loss
LO feedthrough to IF
LO to mixer input feedthrough
LO to LNA input feedthrough
Harmonic content
tON/OFF Turn on/off time1
NOTE:
1. External circuit dependent
LNA + Mixer (excluding filter
loss)
@ 881 MHz
50 system
50 system
PRFin = –35 dBm, 60 kHz offset
fIF = 110 MHz
Ext. impedance matching req.
PRFin = –27 dBm, 60 kHz offset
PRFin = –35 dBm
50 system
50 system
MIN.
22
869
869
70
939
–2
LIMITS
UNITS
–3σ TYP +3σ MAX.
dB
17.5
2
TBD
10
10
–19
–4
1.6
110
7.5
–10
9.5
–15
6
26
TBD
0
0
10
10
TBD
TBD
TBD
–20
894 MHz
dB
dB
dB
dB
dB
dBm
dBm
dB
100 µs
894 MHz
200 MHz
dB
dB
dB
dBm
dBm
dBm
dBm
100 µs
1094
+2
100
MHz
dBm
dBm
dB
dB
dBm
dBm
dBm
dB
µs
1999 Dec 17
5

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