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PDF S8M Data sheet ( Hoja de datos )
| Número de pieza | S8M | |
| Descripción | 8 Amp Silicon Rectifier 50 to 1000 Volts | |
| Fabricantes | Micro Commercial Components | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de S8M (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MCC
omponents
21201 Itasca Street Chatsworth
!"#
$
% !"#
S8A
THRU
S8M
Features
• For Surface Mount Applications
• Extremely Low Thermal Resistance
• Easy Pick And Place
• High Temp Soldering: 250°C for 10 Seconds At Terminals
• High Current Capability
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
• Maximum Thermal Resistance; 8°C/W Junction To Lead
Microsemi
Part
Number
S8A
S8B
S8D
S8G
S8J
S8K
S8M
Device
Marking
S8A
S8B
S8D
S8G
S8J
S8K
S8M
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
8.0A TJ = 75°C
Peak Forward Surge
Current
IFSM
300A 8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
Maximum DC
VF 1.20V IFM = 8.0A;
TJ = 25°C*
Reverse Current At
Rated DC Blocking
Voltage
IR 10µA TJ = 25°C
100µA TJ = 100°C
Typical Junction
Capacitance
CJ 150pF Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 200 µsec, Duty cycle 2%
8 Amp
Silicon Rectifier
50 to 1000 Volts
DO-214AB
(SMCJ) (Round Lead)
H
Cathode Band
J
A
E
F
D
G
INCHES
DIM MIN
A .200
B .177
C .002
D ---
E .053
F .168
G .320
H .239
J .234
DIMENSIONS
MAX
.214
.203
.005
.02
.067
.179
.330
.243
.240
MM
MIN
5.08
4.70
.05
---
1.35
4 .27
8.13
6.08
5.95
C
B
MAX
5.43
5.30
.13
.51
1.70
4.55
8.38
6.18
6.10
NOTE
SUGGESTED SOLDER
PAD LAYOUT
0.190
0.200
0.070”
www.mccsemi.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet S8M.PDF ] | |
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