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PDF G20N60B3D Data sheet ( Hoja de datos )

Número de pieza G20N60B3D
Descripción 40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Fabricantes Fairchild 
Logotipo Fairchild Logotipo



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Data Sheet
HGTG20N60B3D
December 2001
40A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG20N60B3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. The device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
diode used in anti-parallel with the IGBT is the RHRP3060.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential.
Formerly developmental type TA49016.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG20N60B3D
TO-247
G20N60B3D
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 40A, 600V at TC = 25oC
• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC
• Short Circuit Rated
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(BOTTOM SIDE METAL)
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGTG20N60B3D Rev. B

1 page




G20N60B3D pdf
HGTG20N60B3D
Typical Performance Curves (Continued)
500 TJ = 150oC, TC = 75oC, VGE = 15V
RG = 10, L = 100mH
VCE = 480V
100
fMAX1 = 0.05/(td(OFF)I + td(ON)I)
fMAX2 = (PD - PC)/(EON +EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 0.76oC/W
10
5 10 20
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
40
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURREN T
120
TC = 150oC, VGE = 15V, RG = 10
100
80
60
40
20
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 14. SWITCHING SAFE OPERATING AREA
100 0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
SINGLE PULSE
10-3
10-5
10-4
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
10-1
100
101
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
100
80
150oC
60
100oC
40
25oC
20
0
0 0.5 1.0 1.5 2.0 2.5
VEC, FORWARD VOLTAGE (V)
FIGURE 16. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
50 TC = 25oC, dIEC/dt = 100A/µs
40 trr
30
ta
20
tb
10
0
1 5 10 20
IEC, FORWARD CURRENT (A)
FIGURE 17. RECOVERY TIMES vs FORWARD CURRENT
©2001 Fairchild Semiconductor Corporation
HGTG20N60B3D Rev. B

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