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PDF P121 Data sheet ( Hoja de datos )
| Número de pieza | P121 | |
| Descripción | PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | |
| Fabricantes | Polyfet RF Devices | |
| Logotipo |  |
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polyfet rf devices
P121
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
TM
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
input impedance and high efficiency.
PATENTED GOLD METALLIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
1.0 Watts Single Ended
Package Style SO8
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
Total
Device
Dissipation
10 Watts
Junction to
Case Thermal
Resistance
o
15.00 C/W
ABSOLUTE MAXIMUM RATINGS ( T C= 25 oC )
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
200 oC
oo
-65 C to 150 C
0.8 A
50 V
Drain to
Source
Voltage
50 V
Gate to
Source
Voltage
30 V
RF CHARACTERISTICS (
SYMBOL PARAMETER
MIN TYP
Gps Common Source Power Gain
η Drain Efficiency
10
50
VSWR Load Mismatch Tolerance
1.0 WATTS OUTPUT )
MAX UNITS TEST CONDITIONS
dB Idq = 0.20 A, Vds = 12.5 V, F = 850MHz
% Idq = 0.20 A, Vds = 12.5 V, F = 850 MHz
20:1 Relative Idq = 0.20 A, Vds = 12.5 V, F = 850MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss
Idss
Drain Breakdown Voltage
Zero Bias Drain Current
40 V Ids = 0.01 A, Vgs = 0V
0.2 mA
Vds = 12.5 V, Vgs = 0V
Igss Gate Leakage Current
1 uA
Vds = 0V Vgs = 30V
Vgs Gate Bias for Drain Current
1
7V
Ids = 0.02 A, Vgs = Vds
gM Forward Transconductance
0.2 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
2.00
Ohm
Vgs = 20V, Ids = 1.60 A
Idsat
Saturation Current
2.30 Amp Vgs = 20V, Vds = 10V
Ciss Common Source Input Capacitance
7.5 pF Vds = 12.5 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
1.2 pF Vds = 12.5 Vgs = 0V, F = 1 MHz
Coss Common Source Output Capacitance
8.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 06/19/2000
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet P121.PDF ] | |
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