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Número de pieza | P1087 | |
Descripción | P-Channel Switch | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de P1087 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! P1087
P-Channel Switch
• This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers.
• Sourced from process 88.
DS G
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
VDG Drain-Gate Voltage
- 30
VGS Gate-Source Voltage
30
IGF Forward Gate Current
50
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
TO-92
Units
V
V
mA
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVGSS
IGSS
ID(off)
Gate-Source Breakdown Voltage
Gate Reverse Current
Drain Cutoff Leakage Current
VDS = 0V, IG = 1µA
VGS = 15V
VDS = 15V
VGS = 7V
T = +85°C
IDGO
Drain-Gate Leakage Current
VDG = 15V
IS = 0
T = +85°C
IDSS
VGS(off)
VDS(on)
rDS(on)
rds(on)
Ciss
Crss
td(on)
tr
td(off)
tf
Zero-Gate Voltage Drain Current
Gate-Source Cutoff Voltage
Drain-Source On Voltage
Drain-Source On Resistance
Drain-Source On Resistance
Input Capacitance
Reverse Transfer Capacitance
Trun On Time
Rise Time
Trun Off Time
Fall Time
VDS = 20V, VGS = 0V
VDS = 15V, ID = 1µA
VGS = 0V, ID = 3mA
VGS = 0V, ID = 1mA
VGS = 0V, ID = 0, f = 1kHz
VDS = 15V, VGS = 0V, f = 1MHz
VDS = 0V, VGS = 7V, f = 1MHz
VDD = -6V
VGS(off) = +7V
RL = 1.8kΩ
ID(on) = -3mA
Min. Typ. Max. Units
30 V
2 nA
10 nA
0.5 µA
2 NA
0.1 µA
5 mA
5V
0.5 V
150 Ω
150 Ω
45 pF
10 pF
15 ns
75 ns
25 ns
100 ns
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet P1087.PDF ] |
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