DataSheet.es    


PDF OH10003 Data sheet ( Hoja de datos )

Número de pieza OH10003
Descripción GaAs Hall Device
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de OH10003 (archivo pdf) en la parte inferior de esta página.


Total 2 Páginas

No Preview Available ! OH10003 Hoja de datos, Descripción, Manual

GaAs Hall Devices
OH10003
GaAs Hall Device
Magnetic sensor
I Features
Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T)
Input resistance: typ. 0.85 k
Satisfactory linearity of GaAs hall voltage with respect to the
magnetic field
Small temperature coefficient of the hall voltage: β ≤ − 0.06%/°C
Sealed in the Mini type (4-pin) package. Allowing automatic
insertion through the taping and the magazine package.
0.65 ± 0.15
+ 0.2
2.8 0.3
+ 0.2
1.5 0.3
Unit : mm
0.65 ± 0.15
0.5 R
41
32
I Applications
Various hall motor (VCR, phonograph, VD, CD, and FDD)
Automotive equipment
Industrial equipment
Applicable to wide-varying field (OA equipment, etc.)
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Control voltage
Power dissipation
Operating ambient temperature
Storage temperature
VC 12
V
PD 150 mW
Topr 30 to +125
°C
Tstg 55 to +125
°C
0.4 ± 0.2
1 : VH Output (−) side
2 : VC Input (−) side
3 : VH Output (+) side
4 : VC Input (+) side
Mini Type Package (4-pin)
Marking Symbol: 3
I Electrical Characteristics Ta = 25°C
Parameter
Hall voltage*1, 4
Unequilibrium ratio*2, 4
Input resistance
Output resistance
Temperature coefficient of hall voltage
Temperature coefficient of input
resistance
Symbol
VH
VHO/VH
RIN
ROUT
β
α
Conditions
VC = 6 V, B = 0.1 T
VC = 6 V, B = 0 T/B = 0.1 T
IC = 1 mA, B = 0 T
IC = 1 mA, B = 0 T
IC = 6 mA, B = 0.1 T
IC = 1 mA, B = 0 T
Min Typ Max Unit
130 150 170 mV
±12 %
0.50 0.852
k
5 k
0.06 %/°C
0.3 %/°C
Linearity of hall voltage*3
γ IC = 6 mA, B = 0.1 T/0.5 T
2
Note)
*1 :
VH =
VH++VH
2
*2 : Unequilibrium ratio is a percentage of VHO with respect to VH.
*3 : The linearity γ of VH is a percentage of a difference between cumulative sensitivity of KH1 and KH5 which are
measured respectively at B = 0.1 T and 0.5 T to their average. That is,
γ=
KH5KH1
1/2(KH1+KH5)
(the cumulative sensitivity KH =
*4 : VH, VHO/VH rank classification
VH
IC B
)
%
Class
HQ
HR
VH (mV) 130 to 158 142 to 170
VHO/VH (%)
5 to +5
Marking Symbol 3HQ
3HR
IQ IR
130 to 158 142 to 170
+2 to +12
3IQ 3IR
KQ KR
130 to 158 142 to 170
2 to 12
3KQ
3KR
1

1 page





PáginasTotal 2 Páginas
PDF Descargar[ Datasheet OH10003.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
OH10003GaAs Hall DevicePanasonic Semiconductor
Panasonic Semiconductor
OH10004GaAs Hall DevicePanasonic Semiconductor
Panasonic Semiconductor
OH10008GaAs Hall DevicePanasonic Semiconductor
Panasonic Semiconductor
OH10009GaAs Hall DevicePanasonic Semiconductor
Panasonic Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar