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PDF NTHD5904T1 Data sheet ( Hoja de datos )

Número de pieza NTHD5904T1
Descripción Power MOSFET Dual N-Channel
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NTHD5904T1
Power MOSFET
Dual N-Channel
3.1 Amps, 20 Volts
Features
Low RDS(on) for Higher Efficiency
Logic Level Gate Drive
Miniature ChipFETt Surface Mount Package Saves Board Space
Applications
Power Management in Portable and Battery–Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
http://onsemi.com
DUAL N–CHANNEL
3.1 AMPS, 20 VOLTS
RDS(on) = 75 mW
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Steady
Symbol 5 secs State
Drain–Source Voltage
Gate–Source Voltage
Continuous Drain Current
(TJ = 150°C) (Note 1)
TA = 25°C
TA = 85°C
Pulsed Drain Current
Continuous Source Current
(Diode Conduction) (Note 1)
VDS
VGS
ID
20
"12
"4.2
"3.0
"3.1
"2.2
IDM "10
IS 1.8 0.9
Maximum Power Dissipation
(Note 1)
TA = 25°C
TA = 85°C
PD
Operating Junction and Storage
Temperature Range
TJ, Tstg
1. Surface Mounted on 1x 1FR4 Board.
2.1 1.1
1.1 0.6
–55 to +150
Unit
V
V
A
A
A
W
°C
D1 D2
G1 G2
S1 S2
N–Channel MOSFET N–Channel MOSFET
ChipFET
CASE 1206A
STYLE 2
PIN CONNECTIONS
MARKING
DIAGRAM
D1 8
D1 7
D2 6
D2 5
1 S1
2 G1
3 S2
4 G2
1
2
3
4
8
7
6
5
A1 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
NTHD5904T1 ChipFET 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2002
March, 2002 – Rev. 3
1
Publication Order Number:
NTHD5904T1/D

1 page




NTHD5904T1 pdf
NTHD5904T1
TYPICAL ELECTRICAL CHARACTERISTICS
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10–4
Single Pulse
Notes: PDM
t1
t2
t1
1. Duty Cycle, D = t 2
2. Per Unit Base = RthJA = 90°C/W
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
10–3
10–2
10 –1
1
Square Wave Pulse Duration (sec)
10
Figure 12. Normalized Thermal Transient Impedance, Junction–to–Ambient
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10–4
Single Pulse
10–3
10–2
10 –1
Square Wave Pulse Duration (sec)
1
Figure 13. Normalized Thermal Transient Impedance, Junction–to–Foot
10
http://onsemi.com
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