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PDF NDT456P Data sheet ( Hoja de datos )

Número de pieza NDT456P
Descripción P-Channel Enhancement Mode Field Effect Transistor
Fabricantes Fairchild 
Logotipo Fairchild Logotipo



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December 1998
NDT456P
P-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT P-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance and provide superior
switching performance. These devices are particularly
suited for low voltage applications such as notebook
computer power management, battery powered circuits,
and DC motor control.
Features
-7.5 A, -30 V. RDS(ON) = 0.030 @ VGS = -10 V
RDS(ON) = 0.045 @ VGS = -4.5 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely
used surface mount package.
______________________________________________________________________________
DD
GD S
GS
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Fairchild Semiconductor Corporation
NDT456P
-30
±20
±7.5
±20
3
1.3
1.1
-65 to 150
42
12
Units
V
V
A
W
°C
°C/W
°C/W
NDT456P Rev. F

1 page




NDT456P pdf
Typical Electrical Characteristics
1 .1
1 .0 8
ID =- 250µA
1 .0 6
1 .0 4
1 .0 2
1
0 .9 8
0 .9 6
0 .9 4
-5 0
-2 5
0
25 50 75 100 125 150
T , JU N CTION T EM PERA T U RE (°C)
J
Figure 7. Breakdown Voltage Variation with
Temperature.
20
V GS= 0V
5
1
0.1
0.01
TJ = 125°C
25°C
-55°C
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
-VSD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
4000
3000
2000
1000
Ciss
Coss
500
400
300
200
0.1
f = 1 MHz
VGS = 0V
Crss
0.2
0.5 1
2
5 10
VDS , DRAIN TO SOURCE VOLTAGE (V)
20 30
Figure 9. Capacitance Characteristics.
10
ID = -7.5A
8
6
VDS =- 5V
-10V
-20V
4
2
0
0 10 20 30 40 50
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
60
VIN
VGS
R GEN
G
-VDD
RL
D
V OUT
DUT
S
Figure 11. Switching Test Circuit.
t d(on)
ton
tr
90%
td(off)
toff
tf
90%
VOUT
VIN
10%
10%
50%
10%
90%
50%
PULSE W IDTH
INVERTED
Figure 12. Switching Waveforms.
NDT456P Rev. F

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