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PDF NDT454 Data sheet ( Hoja de datos )
| Número de pieza | NDT454 | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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June 1996
NDT454P
P-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
Features
-5.9A, -30V. RDS(ON) = 0.05Ω @ VGS = -10V
RDS(ON) = 0.07Ω @ VGS = -6V
RDS(ON) = 0.09Ω @ VGS = -4.5V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
____________________________________________________________________________________________
D
D
GD S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
* Order option J23Z for cropped center drain lead.
(Note 1a)
(Note 1)
© 1997 Fairchild Semiconductor Corporation
GS
NDT454P
-30
±20
±5.9
±15
3
1.3
1.1
-65 to 150
42
12
Units
V
V
A
W
°C
°C/W
°C/W
NDT454P Rev. D2
1 page  
Typical Electrical Characteristics (continued)
1.1
1.08
ID = -250µA
1.06
1.04
1.02
1
0.98
0.96
0.94
-50 -25 0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage
Variation with Temperature.
20
10 VGS = 0 V
5
1
TJ = 125°C
0.1
25°C
-55°C
0.01
0.001
0
0.3 0.6 0.9 1.2
-VSD , BODY DIODE FORWARD VOLTAGE (V)
1.5
Figure 8. Body Diode Forward Voltage Variation
with Source Current and
Temperature.
3000
2000
1000
500
C iss
C oss
300
200
100
0.1
f = 1 MHz
VGS = 0 V
C rss
0.3 1 3
10
-VDS , DRAIN TO SOURCE VOLTAGE (V)
30
Figure 9. Capacitance Characteristics.
10
I D = -5.9A
8
V = -10V
DS
-15V
-20V
6
4
2
0
0 10 20 30
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
40
VIN
VG S
RGEN
G
-VD D
RL
D
VOUT
DUT
S
Figure 11. Switching Test Circuit.
t d(on)
ton
tr
90%
td(off)
toff
tf
90%
VO U T
VIN
10%
10%
50%
10%
90%
50%
PULSE WIDTH
INVERTED
Figure 12. Switching Waveforms.
NDT454P Rev. D2
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NDT454.PDF ] | |
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