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Número de pieza | NDT451AN | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Fairchild | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NDT451AN (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! July 1996
NDT451AN
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
Power SOT N-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as DC motor control and DC/DC
conversion where fast switching, low in-line power loss,
and resistance to transients are needed.
7.2A, 30V. RDS(ON) = 0.035Ω @ VGS = 10V
RDS(ON) = 0.05Ω @ VGS = 4.5V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
________________________________________________________________________________
DD
GD S
GS
Absolute Maximum Ratings
Symbol Parameter
TA= 25°C unless otherwise noted
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
* Order option J23Z for cropped center drain lead.
(Note 1a)
(Note 1)
© 1997 Fairchild Semiconductor Corporation
NDT451AN
30
± 20
± 7.2
± 25
3
1.3
1.1
-65 to 150
42
12
Units
V
V
A
W
°C
°C/W
°C/W
NDT451AN Rev. D
1 page Typical Electrical Characteristics
1.1
I = 250µA
D
1.05
1
0.95
0.9
-50
-25
0
25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
25
1 0 VGS =0V
1
TJ = 125°C
0.1
25°C
-55°C
0.01
0.001
0.2
0.4 0.6 0.8 1 1.2
VSD , BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
2000
1500
1000
500
C iss
C oss
200
100
0.1
f = 1 MHz
VGS = 0V
C rss
0.2
0.5 1
2
5 10
VDS , DRAIN TO SOURCE VOLTAGE (V)
20 30
Figure 9. Capacitance Characteristics.
10
ID = 7.2A
8
VDS = 5V 10V
20V
6
4
2
0
0 5 10 15 20
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
25
20
VDS = 10V
16
12
8
TJ = -55°C
25°C
125°C
4
0
0 5 10 15 20 25
ID , DRAIN CURRENT (A)
Figure 11. Transconductance Variation with Drain
Current and Temperature.
NDT451AN Rev. D
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet NDT451AN.PDF ] |
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NDT451AN | N-Channel Enhancement Mode Field Effect Transistor | Fairchild |
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